Theoretical study of the gallium chloride molecule and its interaction with arsenic dangling bonds

1993 ◽  
Vol 47 (20) ◽  
pp. 13420-13431 ◽  
Author(s):  
Yuji Mochizuki ◽  
Toshikazu Takada ◽  
Akira Usui
ACS Catalysis ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 3027-3033 ◽  
Author(s):  
Shengwen Yang ◽  
Christophe Bour ◽  
Vincent Gandon

Author(s):  
Aldo Amore Bonapasta ◽  
Andrea Lapiccirella ◽  
Norberto Tomassini ◽  
Simon L. Altmann ◽  
Kenneth W. Lodge

1997 ◽  
Vol 04 (01) ◽  
pp. 53-58 ◽  
Author(s):  
LOUISE STAUFFER ◽  
CHRISTIAN MINOT

From a recent theoretical study1 using crystalline extension of the Hückel method, the surface contributions to the main features P 1 and P 2 observed in photoemission experiments when atomic hydrogen is chemisorbed on the Si (111)-(7 × 7) reconstructed surface have been attributed to the saturation of the dangling bonds of the adatoms. This paper investigates the bulk contributions to those peaks. The contributions are derived from calculations on an eight-layer slab and on a real bulk. We conclude that states corresponding to σ bonding between successive silicon layers contribute to peak P 2.


2019 ◽  
Vol 41 (3) ◽  
pp. 39-45
Author(s):  
Michel Houssa ◽  
Geoffrey Pourtois ◽  
Emilio Scalise ◽  
Valery Afanas'ev ◽  
Andre Stesmans

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