Inverse-photoemission study of Ge(100), Si(100), and GaAs(100): Bulk bands and surface states

1993 ◽  
Vol 47 (4) ◽  
pp. 2130-2137 ◽  
Author(s):  
J. E. Ortega ◽  
F. J. Himpsel
Keyword(s):  
Surface States ◽  
Inverse Photoemission ◽  
Photoemission Study

VALENCE-BAND PHOTOEMISSION STUDY OF (Ba, Cs) on W(110)

1997 ◽  
Vol 04 (06) ◽  
pp. 1197-1201 ◽  
Author(s):  
TUN-WEN PI ◽  
LE-HONG HONG ◽  
RONG-TZONG WU ◽  
CHIU-PING CHENG
Keyword(s):  
Work Function ◽  
Valence Band ◽  
High Surface ◽  
Surface States ◽  
Metal Substrate ◽  
Inverse Photoemission ◽  
Interfacial Electronic Structure ◽  
Band Spectra ◽  
Photoemission Study ◽  
Tungsten Substrate

We present the first valence-band photoemission study of Ba and Cs on an atomically clean W(110) surface. The cleanness of the tungsten substrate can be justified from both high surface 4f core emission and sharp surface states in the valence-band spectra. Upon Ba (Cs) adsorption, the work function is lowered to 2.02 (1.76) eV, corresponding to one third of a monolayer. Further, the two symmetric high-lying surface states move little in energy but quench rapidly in intensity and diminish at the work-function minimum. On the other hand, the low-lying surface state at 1.41 eV shifts about 215 meV toward higher binding energy and reduces its emission at thicker coverage. The bonding of the Ba d orbital with the W d-like surface states is not found, in contrast to the theoretical calculation and angle-resolved inverse photoemission study of Ba on W(100) . From the coverage-dependent interfacial electronic structure and the parallel behaviors manifest in both Ba on W and Cs on W , the polarized-covalent model for the alkali-metal–substrate interactions is firmly reinforced.

Spin-resolved inverse photoemission study of the Co(1010) surface

1995 ◽  
Vol 148 (1-2) ◽  
pp. 183-184 ◽  
Author(s):  
Sven Bode ◽  
Kai Starke ◽  
Günter Kaindl
Keyword(s):  
Inverse Photoemission ◽  
Photoemission Study

scholarly journals Valence and conduction band offsets of a ZrO2/SiOxNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

2004 ◽  
Vol 241 (10) ◽  
pp. 2246-2252 ◽  
Author(s):  
S. Sayan ◽  
R. A. Bartynski ◽  
X. Zhao ◽  
E. P. Gusev ◽  
D. Vanderbilt ◽  
...  
Keyword(s):  
Conduction Band ◽  
Gate Stack ◽  
Band Offsets ◽  
Inverse Photoemission ◽  
Photoemission Study

Electronic structure of the InP(110) surface: an inverse photoemission study

1991 ◽  
Vol 243 (1-3) ◽  
pp. L31-L36 ◽  
Author(s):  
J.M Nicholls ◽  
K.O Magnusson ◽  
B Reihl
Keyword(s):  
Electronic Structure ◽  
Inverse Photoemission ◽  
Photoemission Study

Angle-resolved photoemission study of a single-domain Si(001)2 × 1-K surface with synchrotron radiation: symmetry and dispersion of surface-states

1992 ◽  
Vol 261 (1-3) ◽  
pp. 217-223 ◽  
Author(s):  
T. Abukawa ◽  
T. Kashiwakura ◽  
T. Okane ◽  
Y. Sasaki ◽  
H. Takahashi ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Surface States ◽  
Single Domain ◽  
Photoemission Study
Sign in / Sign up

Export Citation Format

Share Document