Intersubband transitions in InAs/AlSb quantum wells studied by resonant Raman scattering

1995 ◽  
Vol 51 (15) ◽  
pp. 9786-9790 ◽  
Author(s):  
J. Wagner ◽  
J. Schmitz ◽  
F. Fuchs ◽  
J. D. Ralston ◽  
P. Koidl ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Intersubband Transitions ◽  
Resonant Raman ◽  
Resonant Raman Scattering

RESONANT RAMAN SCATTERING AND EXCITON-PHONON INTERACTION IN CdTe / (Cd,Mn)Te QUANTUM WELLS

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-345-C5-348
Author(s):  
S.-K. CHANG ◽  
H. NAKATA ◽  
A. V. NURMIKKO ◽  
L. A. KOLODZIEJSKI ◽  
R. L. GUNSHOR
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Interaction ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Triply resonant Raman scattering via nonequilibrium phonons in GaAs quantum wells

1992 ◽  
Vol 45 (12) ◽  
pp. 6769-6775 ◽  
Author(s):  
Y. Liu ◽  
R. Sooryakumar ◽  
Emil S. Koteles ◽  
B. Elman
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering mediated by excitons in CdTe/CdZnTe multiple quantum wells

1992 ◽  
Vol 53 (1-6) ◽  
pp. 348-350
Author(s):  
Y. Garini ◽  
H. Tuffigo ◽  
I. Brener ◽  
E. Cohen ◽  
N. Magnea ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Influence of the exciton lifetime on resonant Raman scattering in quantum wells

1992 ◽  
Vol 46 (16) ◽  
pp. 10490-10493 ◽  
Author(s):  
A. J. Shields ◽  
M. Cardona ◽  
R. Nötzel ◽  
K. Ploog
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Exciton Lifetime ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman scattering in GaAs/AlAs quantum wells

1992 ◽  
Vol 7 (3) ◽  
pp. 379-384 ◽  
Author(s):  
W Hayes ◽  
R Springett ◽  
M S Skolnick ◽  
G W Smith ◽  
C R Whitehouse
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Resonant Raman ◽  
Resonant Raman Scattering

Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures

1997 ◽  
Vol 468 ◽  
Author(s):  
D. Behr ◽  
R. Niebuhr ◽  
H. Obloh ◽  
J. Wagner ◽  
K. H. Bachem ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Phonon Mode ◽  
Phonon Frequency ◽  
Material System ◽  
Single Quantum ◽  
System A ◽  
Resonant Raman ◽  
Resonant Raman Scattering ◽  
Excitation Conditions

ABSTRACTWe report on resonant Raman scattering in Al0.15Ga0.85N/GaN single quantum wells (QWs) and AlxGa1-xN/GaN/lnyGa1-yN heterostructures. By choosing appropriate excitation conditions we could probe selectively the GaN quantum well or the Al0.15Ga0.85N barrier of Al0.15Ga0.85N/GaN single quantum wells. For the InxGa1-xN material system a linear frequency shift of the E2- and A1(LO) phonon mode to lower frequencies was found with increasing In content. The shift was determined to -0.79cm-1 per % In content for the A,(LO) phonon frequency. Resonant excitation of AlxGa1-xN/GaN/InyGa1-YN heterostructures enabled us to detect phonon signals from the InxGa1-xN layer in the heterostructure and to determine its In content.

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