Magnetoresistance of a weakly disordered III-V semiconductor quantum well in a magnetic field parallel to interfaces

1997 ◽  
Vol 56 (11) ◽  
pp. 6436-6439 ◽  
Author(s):  
A. G. Mal’shukov ◽  
K. A. Chao ◽  
M. Willander
1998 ◽  
Vol 57 (4) ◽  
pp. R2069-R2072 ◽  
Author(s):  
A. G. Mal’shukov ◽  
K. A. Chao ◽  
M. Willander

2007 ◽  
Vol 301-302 ◽  
pp. 906-909 ◽  
Author(s):  
Sanghoon Lee ◽  
D.Y. Shin ◽  
E.K. Hyun ◽  
S.-R. Lee ◽  
M. Dobrowolska ◽  
...  

2018 ◽  
Vol 60 (8) ◽  
pp. 1566
Author(s):  
I.V. Kalitukha ◽  
M. Salewski ◽  
I.A. Akimov ◽  
V.L. Korenev ◽  
V.F. Sapega ◽  
...  

AbstractThe magnetization properties of a ferromagnet-semiconductor Co/CdMgTe/CdTe quantum well hybrid structure are investigated by several techniques. Exploiting the proximity effect between acceptor bound holes and magnetic ions we detect the magnetization curves by measuring the circular polarization of photoluminescence in an out-of-plane magnetic field. We show that magnetization originates from interfacial ferromagnet on Co-CdMgTe interface and the proximity effect is caused by magnetization of interfacial Co-CdMgTe ferromagnetic layer whose magnetic properties are very different from Co.


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