Electron g-Factor in Diluted Magnetic Semiconductor Quantum Well with Parabolic Potential in the Presence of Rashba Effect and Magnetic Field

nano Online ◽  
2016 ◽  
Author(s):  
Arif M. Babanlı ◽  
Ekrem Artunç ◽  
Turgut F. Kasalak
2015 ◽  
Vol 70 (2) ◽  
pp. 109-114 ◽  
Author(s):  
Arif M. Babanlı ◽  
Ekrem Artunç ◽  
Turgut F. Kasalak

AbstractWe have studied the Rashba spin-orbital effect on a diluted magnetic semiconductor (DMS) quantum well with parabolic potential in the presence of a magnetic field parallel to the z axis, taking into account the Zeeman coupling and the s-d exchange interaction between the carriers and the magnetic ions. We have obtained an analytical expression for the electron energy spectrum, which depends on the magnetic ion concentration, temperature, and strength of magnetic field. By using the obtained energy spectrum, we calculated the electron effective g*-factor. We have found that effective g*-factor increases when the magnetic field increases; by increasing the strength of spin-orbit interaction, the electron g*-factor decreases and by increasing the temperature, the electron g*-factor increases.


2001 ◽  
Vol 79 (12) ◽  
pp. 1789-1791 ◽  
Author(s):  
J. Kossut ◽  
I. Yamakawa ◽  
A. Nakamura ◽  
G. Cywiński ◽  
K. Fronc ◽  
...  

2004 ◽  
Vol 84 (15) ◽  
pp. 2826-2828 ◽  
Author(s):  
H. Schömig ◽  
A. Forchel ◽  
S. Halm ◽  
G. Bacher ◽  
J. Puls ◽  
...  

2009 ◽  
Vol 23 (17) ◽  
pp. 3596-3601 ◽  
Author(s):  
LJUDMILA SHCHUROVA ◽  
VLADIMIR KULBACHINSKII

We have investigated the thermodynamic, transport and magnetotransport properties of free charge carriers in a diluted magnetic semiconductor with a quantum well In0.17Ga0.83As in GaAs with δ-doped by C and Mn. In order to determine the density of the holes in a quantum well, we carried out thermodynamic calculations of the system of free holes, atoms Mn0 and ions Mn-. We calculated the temperature dependence of resistance and magnetoresistance of holes in the quantum well. The contributions of various scattering mechanisms of holes to the resistance were analyzed. The negative magnetoresistance are explained as the reduction of spin-flip scattering by aligning spins of the magnetic field.


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