Intrinsic defects in GaN.  I.  Ga sublattice defects observed by optical detection of electron paramagnetic resonance

2004 ◽  
Vol 69 (4) ◽  
Author(s):  
K. H. Chow ◽  
L. S. Vlasenko ◽  
P. Johannesen ◽  
C. Bozdog ◽  
G. D. Watkins ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Optical Detection ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Electron Paramagnetic

Intrinsic defects in GaN. II. Electronically enhanced migration of interstitial Ga observed by optical detection of electron paramagnetic resonance

2004 ◽  
Vol 69 (4) ◽  
Author(s):  
P. Johannesen ◽  
A. Zakrzewski ◽  
L. S. Vlasenko ◽  
G. D. Watkins ◽  
Akira Usui ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Optical Detection ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Electron Paramagnetic

Publisher’s Note: Intrinsic defects in GaN. I. Ga sublattice defects observed by optical detection of electron paramagnetic resonance [Phys. Rev. B69, 045207 (2004)]

2004 ◽  
Vol 69 (8) ◽  
Author(s):  
K. H. Chow ◽  
L. S. Vlasenko ◽  
P. Johannesen, ◽  
C. Bozdog ◽  
G. D. Watkins ◽  
...  
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Optical Detection ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Electron Paramagnetic

Intrinsic Defects in HPSI 6H-SiC: an EPR Study

2008 ◽  
Vol 600-603 ◽  
pp. 381-384 ◽  
Author(s):  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Björn Magnusson ◽  
Anne Henry ◽  
Erik Janzén
Keyword(s):  
Electron Paramagnetic Resonance ◽  
Vapor Deposition ◽  
Thermal Activation ◽  
Chemical Vapor ◽  
Paramagnetic Resonance ◽  
Intrinsic Defects ◽  
Annealing Behavior ◽  
Carbon Vacancy ◽  
The Stability ◽  
Electron Paramagnetic

High-purity, semi-insulating 6H-SiC substrates grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). The carbon vacancy (VC), the carbon vacancy-antisite pair (VCCSi) and the divacancy (VCVSi) were found to be prominent defects. The (+|0) level of VC in 6H-SiC is estimated by photoexcitation EPR (photo-EPR) to be at ~ 1.47 eV above the valence band. The thermal activation energies as determined from the temperature dependence of the resistivity, Ea~0.6-0.7 eV and ~1.0-1.2 eV, were observed for two sets of samples and were suggested to be related to acceptor levels of VC, VCCSi and VCVSi. The annealing behavior of the intrinsic defects and the stability of the SI properties were studied up to 1600°C.

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