annealing behavior
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Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1229
Author(s):  
Chuan-Ting Wang ◽  
Zheng Li ◽  
Yong He ◽  
Jing-Tao Wang ◽  
Terence G. Langdon

Tube high-pressure shearing (t-HPS) processing was performed on a eutectic Bi–Sn (57/43) alloy for 0.25, 1, 5 and 20 turns. The selected samples were stored at room temperature for up to 56 days to examine the strain weakening and self-annealing behavior of the alloy. The results showed that t-HPS processing gradually refined the microstructure and led to decreasing of microhardness, but microhardness increased slowly during the subsequent storage at room temperature. Shear localization of the eutectic structure during t-HPS processing was observed as large amounts of narrow dense lamellar zones were visible in the deformed microstructures. The Bi–Sn (57/43) alloy processed by t-HPS exhibited significantly enhanced superplastic properties with elongations up to >1800% in a sample after t-HPS processing for 20 turns. This high elongation is attributed to the breaking of the lamellar structure and the very small grain size.


2021 ◽  
pp. 111359
Author(s):  
Yadong Li ◽  
Pei Chen ◽  
Fei Qin ◽  
Tong An ◽  
Yanwei Dai ◽  
...  

2020 ◽  
Vol 60 (1) ◽  
pp. 016502
Author(s):  
Masamichi Akazawa ◽  
Ryo Kamoshida ◽  
Shunta Murai ◽  
Tetsu Kachi ◽  
Akira Uedono

2020 ◽  
Vol 1004 ◽  
pp. 337-342
Author(s):  
Yoji Chiba ◽  
Yuichi Yamazaki ◽  
Shin Ichiro Sato ◽  
Takahiro Makino ◽  
Naoto Yamada ◽  
...  

We demonstrated the enhancement of the optically detected magnetic resonance (ODMR) contrast of negatively charged silicon vacancy (VSi-) in SiC by thermal treatment. To create high density VSi-, Proton Beam Writing (PBW) was conducted. After an annealing at 600 °C, ODMR contrast showed the highest value in the investigated temperature range. At a fewer irradiation fluence, despite no significant change was observed in terms of VSi- PL intensity, the improvement of the ODMR contrast was observed. Considering defect energy levels and annealing behavior previously reported, it was deduced that the improvement of the ODMR contrast was caused by the reduction of other irradiation induced defect centers, such as EH1/EH3 centers.


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