Tight-binding model for semiconductor quantum dots with a wurtzite crystal structure: From one-particle properties to Coulomb correlations and optical spectra

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
S. Schulz ◽  
S. Schumacher ◽  
G. Czycholl
2003 ◽  
Vol 67 (3) ◽  
Author(s):  
A. Aldea ◽  
V. Moldoveanu ◽  
M. Niţă ◽  
A. Manolescu ◽  
V. Gudmundsson ◽  
...  

2003 ◽  
Vol 02 (01n02) ◽  
pp. 37-48 ◽  
Author(s):  
Wei Cheng ◽  
Shang-Fen Ren

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight-binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.


1995 ◽  
Vol 73 (3-4) ◽  
pp. 147-162 ◽  
Author(s):  
R. Akis ◽  
C. Barnes ◽  
G. Kirczenow

Using a model that is based on a transfer matrix formalism, we study the electronic structure and transport in two dimensional periodic arrays of quantum dots in magnetic fields. The quantum dots in our model are connected to each other via ballistic constrictions. The spectrum for this system has much in common with that with the tight-binding model. In particular, q bulk bands arise if the normalized magnetic flux per unit cell is p/q, where p and q are coprime integers. Working within an edge-state picture, we investigate if these similarities translate to a correspondence in the transport properties of the two systems. As we shall show, the answer to this question depends very much on the transmission probability of the constrictions. Our analysis also shows that, under certain circumstances, the Hall conductance within the context of the tight-binding model may take on fractional values.


AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015127
Author(s):  
Qiuyuan Chen ◽  
Jiawei Chang ◽  
Lin Ma ◽  
Chenghan Li ◽  
Liangfei Duan ◽  
...  

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