Edge states, band structure, and the Hall effect in two-dimensional lattice structures: quantum dot arrays and the tight-binding model

1995 ◽  
Vol 73 (3-4) ◽  
pp. 147-162 ◽  
Author(s):  
R. Akis ◽  
C. Barnes ◽  
G. Kirczenow

Using a model that is based on a transfer matrix formalism, we study the electronic structure and transport in two dimensional periodic arrays of quantum dots in magnetic fields. The quantum dots in our model are connected to each other via ballistic constrictions. The spectrum for this system has much in common with that with the tight-binding model. In particular, q bulk bands arise if the normalized magnetic flux per unit cell is p/q, where p and q are coprime integers. Working within an edge-state picture, we investigate if these similarities translate to a correspondence in the transport properties of the two systems. As we shall show, the answer to this question depends very much on the transmission probability of the constrictions. Our analysis also shows that, under certain circumstances, the Hall conductance within the context of the tight-binding model may take on fractional values.

2003 ◽  
Vol 67 (3) ◽  
Author(s):  
A. Aldea ◽  
V. Moldoveanu ◽  
M. Niţă ◽  
A. Manolescu ◽  
V. Gudmundsson ◽  
...  

2011 ◽  
Vol 25 (06) ◽  
pp. 359-376 ◽  
Author(s):  
ZHENHUA QIAO ◽  
WEI REN ◽  
JIAN WANG

The mesoscopic transport physics of spin Hall effect and quantized spin Hall effect is briefly reviewed. This paper concentrates on the universal spin Hall conductance fluctuations discovered in both effects. We present various model Hamiltonians corresponding to different physical problems arising recently in condensed matter physics, ranging from two-dimensional electron gas to topological insulators. Green's function formalism within a tight-binding model and the random matrix theory are introduced to study the same electron transport mechanism. The calculated spin Hall conductance results are discussed and some excellent agreement has been found from different approaches. A short summary and our perspectives are provided at the end of paper.


2003 ◽  
Vol 02 (01n02) ◽  
pp. 37-48 ◽  
Author(s):  
Wei Cheng ◽  
Shang-Fen Ren

Electronic States of Si and Ge QDs of 5 to 3127 atoms with saturated shapes in a size range of 0.57 to 4.92 nm for Si and 0.60 to 5.13 nm for Ge are calculated by using an empirical tight-binding model combined with the irreducible representations of the group theory. The results are compared with those of Si and Ge quantum dots with spherical shape. The effects of the shapes on electronic states in QDs are discussed.


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