Electronic structure, bonding, charge distribution, and x-ray absorption spectra of the (001) surfaces of fluorapatite and hydroxyapatite from first principles

Electronic structure, X-ray absorption, and magnetic circular dichroism (XMCD) spectra in the CoFeMnSi Heusler alloy were studied from first principles. Fully relativistic Dirac linear muffin-tin orbital band structure method was implemented with various exchange–correlation functionals tested. The supercell approach was used to study the influence of intersite disorder, at the levels of 6.25%, 12.5%, and 25% within transition metal sites, on the XMCD spectra at [Formula: see text] edges and spin polarization (SP) at the Fermi level. It is found that most sensitive to Fe–Mn and Co–Fe disorder are XMCD spectra at [Formula: see text] edges of Fe, while the sensitivity decreases from Mn to Co. It is shown that magnetic moments estimated with the use of magneto-optical (MO) sum rules agree with the ab initio calculated ones to within [Formula: see text], [Formula: see text], and [Formula: see text], for Co, Fe, and Mn, respectively. The calculated SP decreases from 99% for ordered CoFeMnSi alloy, to 96% upon 25% Co–Fe disorder, to 83% for Fe–Mn disorder, and to 42% in the case of Co–Mn disorder. The calculated spectra agree well with the available experimental data. The rich XMCD spectral structures are predicted from first principles at Fe, Co, Mn and Si [Formula: see text] edges.

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Bulk and Surface Electronic Structure of GaN Measured Using Angle-Resolved Photoemission, Soft X-ray Emission and Soft X-ray Absorption

MRS Proceedings ◽

10.1557/proc-449-787 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 5

Author(s):

Kevin E. Smith ◽

Sarnjeet S Dhesi ◽

Laurent-C. Duda ◽

Cristian B Stagarescu ◽

J. H. Guo ◽

...

Keyword(s):

Electronic Structure ◽

Valence Band ◽

Absorption Spectra ◽

Conduction Band ◽

Brillouin Zone ◽

Emission Spectra ◽

Partial Density ◽

High Symmetry ◽

X Ray ◽

X Ray Absorption

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.

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