scholarly journals Temperature dependence of the anharmonic decay of optical phonons in carbon nanotubes and graphite

2011 ◽  
Vol 83 (20) ◽  
Author(s):  
Ioannis Chatzakis ◽  
Hugen Yan ◽  
Daohua Song ◽  
Stéphane Berciaud ◽  
Tony F. Heinz
2017 ◽  
Vol 9 (5) ◽  
pp. 05011-1-05011-5 ◽  
Author(s):  
О. І. Konopelnyk ◽  
◽  
О. І. Aksimentyeva ◽  
Yu. Yu. Horbenko ◽  
◽  
...  

2000 ◽  
Vol 76 (15) ◽  
pp. 2053-2055 ◽  
Author(s):  
H. D. Li ◽  
K. T. Yue ◽  
Z. L. Lian ◽  
Y. Zhan ◽  
L. X. Zhou ◽  
...  

Author(s):  
Eric Pop

The electron-phonon energy dissipation bottleneck is examined in silicon and carbon nanoscale devices. Monte Carlo simulations of Joule heating are used to investigate the spectrum of phonon emission in bulk and strained silicon. The generated phonon distributions are highly non-uniform in energy and momentum, although they can be approximately grouped into one third acoustic (AC) and two thirds optical phonons (OP) at high electric fields. The phonon dissipation is markedly different in strained silicon at low electric fields, where certain relaxation mechanisms are blocked by scattering selection rules. In very short (∼10 nm) silicon devices, electron and phonon transport is quasi-ballistic, and the heat generation domain is much displaced from the active device region, into the contact electrodes. The electron-phonon bottleneck is more severe in carbon nanotubes, where the optical phonon energy is three times higher than in silicon, and the electron-OP interaction is entirely dominant at high fields. Thus, persistent hot optical phonons are easily generated under Joule heating in single-walled carbon nanotubes suspended between two electrodes, in vacuum. This leads to negative differential conductance at high bias, light emission, and eventual breakdown. Conversely, optical and electrical measurements on such nanotubes can be used to gauge their thermal properties. The hot optical phonon effects appear less pronounced in suspended nanotubes immersed in an ambient gas, suggesting that phonons find relaxation pathways with the vibrational modes of the ambient gas molecules. Finally, hot optical phonons are least pronounced for carbon nanotube devices lying on dielectrics, where the OP modes can couple into the vibrational modes of the substrate. Such measurements and modeling suggest very interesting, non-equilibrium coupling between electrons and phonons in solid-state devices at nanometer length and picoseconds time scales.


2015 ◽  
Vol 12 (6) ◽  
pp. 826-829 ◽  
Author(s):  
Raul Paucar ◽  
YongGu Shim ◽  
Kazuki Wakita ◽  
Oktay Alekperov ◽  
Nazim Mamedov

2012 ◽  
Vol 26 (21) ◽  
pp. 1250136 ◽  
Author(s):  
SAJJAD DEHGHANI ◽  
MOHAMMAD KAZEM MORAVVEJ-FARSHI ◽  
MOHAMMAD HOSSEIN SHEIKHI

We present a model to understand the effect of temperature on the electrical resistance of individual semiconducting single wall carbon nanotubes (s-SWCNTs) of various diameters under various electric fields. The temperature dependence of the resistance of s-SWCNTs and metallic SWCNTs (m-SWCNTs) are compared. These results help us to understand the temperature dependence of the resistance of SWCNTs network. We experimentally examine the temperature dependence of the resistance of random networks of SWCNTs, prepared by dispersing CNTs in ethanol and drop-casting the solution on prefabricated metallic electrodes. Examining various samples with different electrode materials and spacings, we find that the dominant resistance in determination of the temperature dependence of resistance of the network is the resistance of individual tubes, rather than the tube–tube resistance or tube–metal contact resistance. It is also found that the tube–tube resistance depends on the electrode spacing and it is more important for larger electrode spacings. By applying high electric field to burn the all-metallic paths of the SWCNTs network, the temperature dependence of the resistance of s-SWCNTs is also examined. We also investigate the effect of acid treatment of CNTs on the temperature dependence of the resistance of SWCNTs and also multi-wall CNTs (MWCNTs) networks.


2006 ◽  
Vol 600 (18) ◽  
pp. 3633-3636 ◽  
Author(s):  
S.P. Hepplestone ◽  
A.M. Ciavarella ◽  
C. Janke ◽  
G.P. Srivastava

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