Atomic surface structure of graphene and its buffer layer on SiC(0001): A chemical-specific photoelectron diffraction approach

2013 ◽  
Vol 87 (8) ◽  
Author(s):  
L. H. de Lima ◽  
A. de Siervo ◽  
R. Landers ◽  
G. A. Viana ◽  
A. M. B. Goncalves ◽  
...  
1983 ◽  
Vol 51 (4) ◽  
pp. 272-275 ◽  
Author(s):  
J. J. Barton ◽  
C. C. Bahr ◽  
Z. Hussain ◽  
S. W. Robey ◽  
J. G. Tobin ◽  
...  

ACS Catalysis ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 4006-4014 ◽  
Author(s):  
Ezra L. Clark ◽  
Stefan Ringe ◽  
Michael Tang ◽  
Amber Walton ◽  
Christopher Hahn ◽  
...  

1999 ◽  
Vol 60 (8) ◽  
pp. R5117-R5120 ◽  
Author(s):  
P. Vogt ◽  
Th. Hannappel ◽  
S. Visbeck ◽  
K. Knorr ◽  
N. Esser ◽  
...  

2006 ◽  
Vol 13 (06) ◽  
pp. 815-818 ◽  
Author(s):  
Y. LIU ◽  
J. WANG ◽  
M. H. XIE ◽  
H. S. WU

The surface structure of InN film heteroepitaxially grown on a GaN buffer layer by MBE is followed by low energy electron diffraction (LEED). The metallic surfactant layers on top of the InN surfaces show an incommensurate structure rather than being disordered. The metal in the incommensurate structure induces additional diffraction spots in the LEED. Based on the Auger experiments, not only In atoms but also Ga are present on the surface of the InN films.


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