scholarly journals Equivalence of effective medium and random resistor network models for disorder-induced unsaturating linear magnetoresistance

2017 ◽  
Vol 96 (22) ◽  
Author(s):  
Navneeth Ramakrishnan ◽  
Ying Tong Lai ◽  
Silvia Lara ◽  
Meera M. Parish ◽  
Shaffique Adam
2008 ◽  
Vol 25 (11) ◽  
pp. 4124-4127 ◽  
Author(s):  
Xu Jie ◽  
Zhang Duan-Ming ◽  
Deng Zong-Wei ◽  
Yang Feng-Xia ◽  
Li Zhi-Hua ◽  
...  

1992 ◽  
Vol 46 (19) ◽  
pp. 12137-12141 ◽  
Author(s):  
K. W. Yu ◽  
P. Y. Tong

2000 ◽  
Vol 612 ◽  
Author(s):  
C. Pennetta ◽  
L. Reggiani ◽  
Gy. Trefán ◽  
F. Fantini ◽  
A. Scorzoni ◽  
...  

AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.


1990 ◽  
Vol 41 (7) ◽  
pp. 4610-4618 ◽  
Author(s):  
A. B. Harris ◽  
Yigal Meir ◽  
Amnon Aharony

2011 ◽  
Vol 199-200 ◽  
pp. 44-53 ◽  
Author(s):  
Sergiy Kalnaus ◽  
Adrian S. Sabau ◽  
Sarah Newman ◽  
Wyatt E. Tenhaeff ◽  
Claus Daniel ◽  
...  

2000 ◽  
Vol 61 (4) ◽  
pp. R3283-R3286 ◽  
Author(s):  
M. Barthélémy ◽  
S. V. Buldyrev ◽  
S. Havlin ◽  
H. E. Stanley

Sign in / Sign up

Export Citation Format

Share Document