A Percolative Approach to Electromigration Modelling
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AbstractWe present a stochastic model which simulates electromigration damage in metallic interconnects by biased percolation of a random resistor network. The main features of experiments including Black's law and the log-normal distribution of the times to failure are well reproduced together with compositional effects showing up in early stage measurements made on Al-0.5%Cu and Al-1%Si lines.
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1977 ◽
Vol AES-13
(5)
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pp. 533-536
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1972 ◽
Vol 6
(6)
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pp. 419-422
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Keyword(s):
2019 ◽
Vol 54
(5)
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pp. 313-318
2005 ◽
Vol 54
(1)
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pp. 64-68
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