In this paper, we present an analytical stochastical approach to the dynamic properties of sequential tunneling through double-barrier systems. The effect of charge accumulation is included in the investigation of dynamic conductance and noise current power density at finite frequency. Albeit in the sequential tunneling limit the quantum phase coherence of electron waves is destroyed by inelastic scattering while traversing the junction, the occupation of resonance states by fermionic particles sojourning in the well along with the charge accumulation within and around the structure still give rise to strong correlation among tunneling events. This correlation determines the characteristic frequency of the system and leads to significant suppression of shot noise. The low frequency noise current power density compares agreeably with experimental measurements.
Finite frequency noise in a normal metal–topological superconductor junction