scholarly journals Calculating spin transport properties from first principles: Spin currents

2019 ◽  
Vol 99 (14) ◽  
Author(s):  
R. J. H. Wesselink ◽  
K. Gupta ◽  
Z. Yuan ◽  
Paul J. Kelly
2017 ◽  
Vol 701 ◽  
pp. 754-758 ◽  
Author(s):  
Jie Li ◽  
Guangqian Ding ◽  
Dan Qin ◽  
Kailun Yao ◽  
G.Y. Gao

2014 ◽  
Vol 2 (32) ◽  
pp. 6648-6654 ◽  
Author(s):  
P. Zhao ◽  
Q. H. Wu ◽  
H. Y. Liu ◽  
D. S. Liu ◽  
G. Chen

The 4H-TAHDI-based spintronic device can exhibit perfect giant magnetoresistance, spin-filtering, bipolar spin-rectifying, and negative differential resistance effects simultaneously.


Author(s):  
Ho Ngoc Nam ◽  
Ryo Yamada ◽  
Haruki Okumura ◽  
Tien Quang Nguyen ◽  
Katsuhiro Suzuki ◽  
...  

Correction for ‘Intrinsic defect formation and the effect of transition metal doping on transport properties in a ductile thermoelectric material α-Ag2S: a first-principles study’ by Ho Ngoc Nam et al., Phys. Chem. Chem. Phys., 2021, DOI: 10.1039/d0cp06624a.


2021 ◽  
Author(s):  
H. R. Mahida ◽  
Deobrat Singh ◽  
Yogesh Sonvane ◽  
Sanjeev K. Gupta ◽  
P. B. Thakor ◽  
...  

In the present study, we have investigated the structural, electronic, and charge transport properties of pristine, hydrogenated, and oxidized Si2BN monolayers via first-principles calculations based on density functional theory (DFT).


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