Band Tails, Entropy, and Equilibrium Defects in Hydrogenated Amorphous Silicon

1987 ◽  
Vol 59 (15) ◽  
pp. 1790-1790 ◽  
Author(s):  
Z E. Smith ◽  
S. Wagner
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Equilibrium Defects ◽  
Hydrogenated Amorphous ◽  
Band Tails

scholarly journals Thermal-equilibrium defects in undoped hydrogenated amorphous silicon, silicon-carbon, and silicon-nitrogen

1990 ◽  
Vol 41 (14) ◽  
pp. 10049-10057 ◽  
Author(s):  
Xixiang Xu ◽  
Hiroyuki Sasaki ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Carbon ◽  
Equilibrium Defects ◽  
Hydrogenated Amorphous ◽  
Silicon Silicon

Thermal Equilibrium Defects in Hydrogenated Amorphous Silicon Based Alloy Films

1989 ◽  
Vol 149 ◽  
Author(s):  
Xixiang Xu ◽  
Akiharu Morimoto ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
Elevated Temperature ◽  
Amorphous Silicon ◽  
Thermal Equilibrium ◽  
Hydrogenated Amorphous Silicon ◽  
Dangling Bonds ◽  
Alloy Films ◽  
Fast Cooling ◽  
Silicon Based ◽  
Equilibrium Defects ◽  
Hydrogenated Amorphous

ABSTRACTBoth the temperature dependence at elevated temperature and the increase after fast cooling from elevated temperature of the density of dangling bonds are measured by ESR for undoped hydrogenated amorphous silicon–based alloy films, a–Si:H, a–Si1−xCx:H, a–Si1−xNx:H and a–Si1−xOx:H. Both a–Si:H and a–Si1−xCx:H clearly show the increase in the density of dangling bonds at elevated temperature, while the increase is less prominent for a–Si1−xNx:H and a–Si1−xOx:H. The observed results for both a–Si:H and a–Si1−xCx:H are fairly well reproduced by the model recently proposed by Smith et al. The results of CPM measurements combined with those of ESR measurements suggest that the density of charged dangling bonds present in undoped a–Si:H also increases after fast cooling from elevated temperature.

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