From experimental data about relative excitation cross sections of many electronic states of neon, the effective oscillator strengths of these transitions have been computed. There is a good agreement between these results and the single available value of optical oscillator strength.
A realistic analytical central potential with two adjustable parameters is used to generate wavefunctions for the ground and excited states of doubly ionized boron. Generalized oscillator strengths and integrated cross sections from threshold up to 5 keY are calculated in the Born approximation for 2s-ns, 2s-np and 2s-nd excitations. Convenient analytic formulae for the cross sections are presented.