Endurance of MOSFETs with rapid thermally reoxidized nitrided thin gate oxides to hot carrier-induced GIDL

IEEE Transactions on Electron Devices ◽

10.1109/16.158740 ◽

1991 ◽

Vol 38 (12) ◽

pp. 2711-2712 ◽

Author(s):

A.B. Joshi ◽

D.L. Kwong

Keyword(s):

Gate Oxides ◽

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Improved hot-carrier immunity in CMOS analog device with N/sub 2/O-nitrided gate oxides

IEEE Electron Device Letters ◽

10.1109/55.192793 ◽

1992 ◽

Vol 13 (9) ◽

pp. 457-459 ◽

Author(s):

G.Q. Lo ◽

J. Ahn ◽

D.-L. Kwong

Keyword(s):

Analog Device ◽

Gate Oxides ◽

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Dependence of hot-carrier immunity on channel length and channel width in MOSFETs with N/sub 2/O-grown gate oxides

IEEE Electron Device Letters ◽

10.1109/55.192874 ◽

1992 ◽

Vol 13 (12) ◽

pp. 651-653 ◽

Author(s):

G.Q. Lo ◽

J. Ahn ◽

D.-L. Kwong ◽

K.K. Young

Keyword(s):

Channel Length ◽

Channel Width ◽

Gate Oxides ◽

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Endurance of Mosfets with Rapid Thermally Deoxidized Nitrided Thin Gate Oxides to Hot Carrier Induced Gidl

[1991] 49th Annual Device Research Conference Digest ◽

10.1109/drc.1991.664710 ◽

2005 ◽

Author(s):

A.B. Joshi ◽

D.L. Kwong

Keyword(s):

Gate Oxides ◽

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New observation and improvement in GIDL current of n-MOSFET's with various kinds of gate oxides under hot-carrier stress

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616449 ◽

2002 ◽

Author(s):

P.T. Lai ◽

Xu Jingping ◽

X. Zeng ◽

Y.C. Cheng

Keyword(s):

Gate Oxides ◽

Hot Carrier ◽

Hot Carrier Stress

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New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress

Solid-State Electronics ◽

10.1016/0038-1101(96)00093-7 ◽

1996 ◽

Vol 39 (11) ◽

pp. 1549-1552 ◽

Author(s):

P.T. Lai ◽

Xu Jingping ◽

X. Zeng ◽

Y.C. Cheng

Keyword(s):

Gate Oxides ◽

Hot Carrier ◽

Hot Carrier Stress

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Process dependence of interface state generation due to irradiation and hot carrier stress in rapid thermally nitrided thin gate oxides

Electronics Letters ◽

10.1049/el:19900804 ◽

1990 ◽

Vol 26 (16) ◽

pp. 1248

Author(s):

A.B. Joshi ◽

G.Q. Lo ◽

D.K. Kwong

Keyword(s):

Interface State ◽

Gate Oxides ◽

Hot Carrier ◽

Hot Carrier Stress ◽

State Generation

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Hot-Carrier Related Phenomenon in MOSFETs with Furnace N2O-Nitrided Gate Oxides

10.7567/ssdm.1993.s-ii-3 ◽

1993 ◽

Author(s):

G. W. Yoon ◽

J. Ahn ◽

G. Q. Lo ◽

D. L. Kwong

Keyword(s):

Related Phenomenon ◽

Gate Oxides ◽

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Optimized data assessment for hot carrier and Fowler-Nordheim stresses on thick MOS gate oxides with plasma process induced charging damage

2012 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/iirw.2012.6468927 ◽

2012 ◽

Author(s):

Andreas Martin ◽

Andreas Koten ◽

Markus Schwerd

Keyword(s):

Plasma Process ◽

Gate Oxides ◽

Hot Carrier ◽

Data Assessment ◽

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Reliability of Submicron Mosfet's with Deposited Gate Oxides under F-N Injection and Hot-Carrier Stress

MRS Proceedings ◽

10.1557/proc-265-237 ◽

1992 ◽

Vol 265 ◽

Author(s):

Ming-Yin Hao ◽

Jack C. Lee ◽

Ih-Chin Chen ◽

Clarence W. Teng

Keyword(s):

Gate Oxides ◽

Hot Carrier ◽

Hot Carrier Stress

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AC hot-carrier effects in MOSFETs with furnace N/sub 2/O-nitrided gate oxides

IEEE Electron Device Letters ◽

10.1109/55.145078 ◽

1992 ◽

Vol 13 (6) ◽

pp. 341-343 ◽

Author(s):

G.Q. Lo ◽

J. Ahn ◽

D.-L. Kwong

Keyword(s):

Gate Oxides ◽

Hot Carrier ◽

Hot Carrier Effects

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