ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings
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(FIVE YEARS 0)

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Published By IEEE

0780333888

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616480 ◽

2002 ◽

Author(s):

Meng-Nian Niu ◽

Xin-Fang Ding ◽

Qin-Yi Tong

Keyword(s):

Surface Sites

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Thermal and field enhanced emission of trapped holes in thin SiO/sub 2/ films

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616440 ◽

2002 ◽

Cited By ~ 1

Author(s):

Q.D.M. Khosru ◽

K. Taniguchi ◽

C. Hamaguchi

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The study of delta-doping concentration effect on a novel quantum-well HEMT structure

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616483 ◽

2002 ◽

Author(s):

Ching-Yuan Cheng ◽

Shui-Jinn Wang ◽

Jia-Chuan Lin ◽

Ying-Che Luo

Keyword(s):

Quantum Well ◽

Doping Concentration ◽

Concentration Effect ◽

Delta Doping ◽

Hemt Structure

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High field domain formation and current-voltage hysteresis in selectively doped GaAs/AlGaAs multiple-quantum-well structures

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616474 ◽

2002 ◽

Author(s):

S.F. Yoon ◽

K. Radhakrishnan ◽

D.H. Zhang ◽

Z.Y. Han

Keyword(s):

Quantum Well ◽

High Field ◽

Multiple Quantum Well ◽

Multiple Quantum ◽

Domain Formation ◽

Quantum Well Structures ◽

Current Voltage ◽

Voltage Hysteresis

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Statistical characterization and the impact of percent phosphorous in LTO-PSG film on opto and small signal technology

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616469 ◽

2002 ◽

Author(s):

D. Warner ◽

E. Tanghal ◽

S. Sundaram

Keyword(s):

Small Signal ◽

Statistical Characterization ◽

The Impact

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ZnSe growth by ion laser-assisted metalorganic chemical vapor deposition

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616462 ◽

2002 ◽

Author(s):

Min-Yen Yeh

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Metalorganic Chemical Vapor Deposition ◽

Chemical Vapor ◽

Ion Laser ◽

Metalorganic Chemical

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High linearity, current drivability and f/sub max/ using pseudomorphic GaAs double-heterojunction HEMT (DHHEMT)

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616441 ◽

2002 ◽

Author(s):

Zheng Hai Qun ◽

Ng Geok Ing ◽

Zhang Yun Qiang ◽

K. Radhakrishnan ◽

Lee Kok Yan ◽

...

Keyword(s):

High Linearity ◽

Double Heterojunction

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An innovative technique to examine gate oxide anomaly for failure analysis

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616445 ◽

2002 ◽

Author(s):

H.G. Chan ◽

Y.K. Lit

Keyword(s):

Failure Analysis ◽

Gate Oxide ◽

Innovative Technique

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Test processor ASIC design

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616494 ◽

2002 ◽

Cited By ~ 4

Author(s):

L. Ali ◽

Z.M. Darus ◽

M.A.M. Ali ◽

I. Ahmed

Keyword(s):

Asic Design

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Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings ◽

10.1109/smelec.1996.616492 ◽

2002 ◽

Cited By ~ 6

Author(s):

T.C.P. Lo ◽

P.C.H. Chan

Keyword(s):

Strain Gauge ◽

Stress Measurements ◽

On Chip

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ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. ProceedingsLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Effect of two types of surface sites on the characteristics of Si/sub 3/N/sub 4/-gate pH-ISFET's

Thermal and field enhanced emission of trapped holes in thin SiO/sub 2/ films

The study of delta-doping concentration effect on a novel quantum-well HEMT structure

High field domain formation and current-voltage hysteresis in selectively doped GaAs/AlGaAs multiple-quantum-well structures

Statistical characterization and the impact of percent phosphorous in LTO-PSG film on opto and small signal technology

ZnSe growth by ion laser-assisted metalorganic chemical vapor deposition

High linearity, current drivability and f/sub max/ using pseudomorphic GaAs double-heterojunction HEMT (DHHEMT)

An innovative technique to examine gate oxide anomaly for failure analysis

Test processor ASIC design

Design and calibration of a 3-D micro-strain gauge for in situ on chip stress measurements

ICSE '96. 1996 IEEE International Conference on Semiconductor Electronics. Proceedings
Latest Publications