A stacked CMOS active pixel image-sensor (APS) has been developed for detecting various kinds of charged particles and its noise performance has been measured and analyzed. The sensitivity for ions and electrons with keV energy level utilizes for ion microscopy such-as SIMS and electron microscopy, respectively.Charge particles such as ions and electrons with kinetic energy of keV order are useful probes for surface analysis of material. A measurement system which yields two-dimensional image of charge particles is highly demanded. The conventional two-dimensional detection system is composed of a micro channel plate, a florescent plate which receives multiplied secondary electrons and generates a visible image, and a visible image sensor. However, its limited dynamic range and non-linearity in the ion-electron-to-photon conversion process make a quantitative measurement difficult. The proposed system using a stacked CMOS APS has several advantages over the conventional system such as high spatial resolution, no insensitive time, high S/N, wide dynamic range, nondestructive readout capability, high robustness, and low power consumption.
Characterization and Optimization of a Single-Transistor Active Pixel Image Sensor with Floating Junction Connected to Floating Gate
