Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion

1994 ◽  
Vol 30 (5) ◽  
pp. 1189-1195 ◽  
Author(s):  
I. Gontijo ◽  
T. Krauss ◽  
J.H. Marsh ◽  
R.M. De La Rue
2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.


1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  

2020 ◽  
Vol 12 (2) ◽  
pp. 1-7
Author(s):  
Yang-Jeng Chen ◽  
Rih-You Chen ◽  
Chih-Hsien Chen ◽  
Yu-Hung Lin ◽  
Cong-Long Chen ◽  
...  

1997 ◽  
Vol 33 (10) ◽  
pp. 1784-1793 ◽  
Author(s):  
Boon Siew Ooi ◽  
K. McIlvaney ◽  
M.W. Street ◽  
A.S. Helmy ◽  
S.G. Ayling ◽  
...  

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