Effects of spatial hole burning on gain switching in vertical-cavity surface-emitting lasers

1997 ◽  
Vol 33 (3) ◽  
pp. 462-468 ◽  
Author(s):  
S.Y. Law ◽  
G.P. Agrawal
2014 ◽  
Vol 22 (4) ◽  
pp. 4196 ◽  
Author(s):  
Shaoqiang Chen ◽  
Akifumi Asahara ◽  
Takashi Ito ◽  
Jiangyong Zhang ◽  
Baoping Zhang ◽  
...  

1997 ◽  
Vol 484 ◽  
Author(s):  
S. F. Yu ◽  
E. Herbert Li ◽  
W. M. Man

AbstractThe enhancement of single transverse mode operation in vertical cavity surface emitting lasers by using interdiffused quantum wells is proposed and analyzed. It is observed that the influence of self-focusing (arising from carrier spatial hole burning and thermal lensing) on the profile of transverse modes can be minimized by introducing a step diffused quantum wells structure inside the core region of quantum-well active layer. Stable single-mode operation in vertical cavity surface emitting lasers can also be maintained.


1996 ◽  
Vol 450 ◽  
Author(s):  
C. W. Lo ◽  
S. F. Yu

ABSTRACTVertical-cavity surface-emitting lasers (VCSELs) with suitable interdiffusion quantum wells profile by the use of selective impurity-induced disordering is proposed for high power single mode operation in large area devices. It is shown that the transverse optical confinement in the quantum well active region formed by the diffusion profile counteracts the influence of carrier spatial hole burning for VCSELs biased at high injection current Results indicate that a single mode operation can be maintained in VCSELs with the diameter of core region equal to 50μm.


1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  

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