AKa-Band Power Amplifier with 22.9 dBm Psat, 22.5 dBm OP1dB and 21% PAE in 130 nm SiGe BiCMOS

2019 IEEE Asia-Pacific Microwave Conference (APMC) ◽

10.1109/apmc46564.2019.9038365 ◽

2019 ◽

Author(s):

Qingfeng Zhang ◽

Chenxi Zhao ◽

Wen Feng ◽

Yiming Yu ◽

Huihua Liu ◽

...

Keyword(s):

Power Amplifier ◽

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A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 42nd European Microwave Conference ◽

10.23919/eumc.2012.6459375 ◽

2012 ◽

Author(s):

Roee Ben Yishay ◽

Roi Carmon ◽

Oded Katz ◽

Benny Sheinman ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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A Q-Band/W-Band Dual-Band Power Amplifier in 0.12 µm SiGe BiCMOS Process

2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2013.6659206 ◽

2013 ◽

Author(s):

Po-Yi Wu ◽

James F. Buckwalter

Keyword(s):

Power Amplifier ◽

Dual Band ◽

W Band ◽

Sige Bicmos ◽

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A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

2019 14th European Microwave Integrated Circuits Conference (EuMIC) ◽

10.23919/eumic.2019.8909410 ◽

2019 ◽

Author(s):

Abdul Ali ◽

Paolo Colantonio ◽

Franco Giannini ◽

Dietmar Kissinger ◽

Herman Jalli Ng ◽

...

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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Design and linearity analysis of a D-band power amplifier in 0.13 μm SiGe BiCMOS technology

2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) ◽

10.1109/csics.2017.8240469 ◽

2017 ◽

Author(s):

Z. Hu ◽

G. Sarris ◽

C. De Martino ◽

M. Spirito ◽

E. McCune

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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A Reconfigurable K-/Ka-Band Power Amplifier With High PAE in 0.18- $\mu$m SiGe BiCMOS for Multi-Band Applications

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2015.2495129 ◽

2015 ◽

Vol 63 (12) ◽

pp. 4395-4405 ◽

Author(s):

Kaixue Ma ◽

Thangarasu Bharatha Kumar ◽

Kiat Seng Yeo

Keyword(s):

Power Amplifier ◽

Ka Band ◽

Sige Bicmos ◽

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A V-Band Power Amplifier With Integrated Wilkinson Power Dividers-Combiners and Transformers in 0.18- $\mu$ m SiGe BiCMOS

IEEE Transactions on Circuits & Systems II Express Briefs ◽

10.1109/tcsii.2018.2850899 ◽

2019 ◽

Vol 66 (3) ◽

pp. 337-341 ◽

Author(s):

Kyoungwoon Kim ◽

Cam Nguyen

Keyword(s):

Power Amplifier ◽

Power Dividers ◽

V Band ◽

Sige Bicmos ◽

Wilkinson Power Dividers

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2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage

2017 IEEE International Solid-State Circuits Conference (ISSCC) ◽

10.1109/isscc.2017.7870251 ◽

2017 ◽

Author(s):

Junlei Zhao ◽

Elham Rahimi ◽

Francesco Svelto ◽

Andrea Mazzanti

Keyword(s):

Power Amplifier ◽

Common Base ◽

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Low phase noise K-band VCO and high efficiency E-band power amplifier for mobile network backhaul in SiGe BiCMOS

2018 International Conference on IC Design & Technology (ICICDT) ◽

10.1109/icicdt.2018.8399763 ◽

2018 ◽

Author(s):

A. Mazzanti ◽

E. Rahimi ◽

N. Lacaita ◽

J. Zhao ◽

M. Bassi ◽

...

Keyword(s):

Phase Noise ◽

Power Amplifier ◽

High Efficiency ◽

Mobile Network ◽

Sige Bicmos ◽

Low Phase Noise ◽

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A 17.5-dBm D-band power amplifier and doubler chain in SiGe BiCMOS technology

2014 9th European Microwave Integrated Circuit Conference ◽

10.1109/eumic.2014.6997789 ◽

2014 ◽

Author(s):

Roee Ben Yishay ◽

Danny Elad

Keyword(s):

Power Amplifier ◽

Bicmos Technology ◽

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New Technique for Synthesizing Concurrent Dual-Band Impedance-Matching Filtering Networks and ${\hbox{0.18-}}\mu{\hbox {m}}$ SiGe BiCMOS 25.5/37-GHz Concurrent Dual-Band Power Amplifier

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/tmtt.2013.2281035 ◽

2013 ◽

Vol 61 (11) ◽

pp. 3927-3939 ◽

Author(s):

Cuong Huynh ◽

Cam Nguyen

Keyword(s):

Power Amplifier ◽

Impedance Matching ◽

New Technique ◽

Dual Band ◽

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