2.6 A SiGe BiCMOS E-band power amplifier with 22% PAE at 18dBm OP1dB and 8.5% at 6dB back-off leveraging current clamping in a common-base stage

2017 ◽  
Author(s):  
Junlei Zhao ◽  
Elham Rahimi ◽  
Francesco Svelto ◽  
Andrea Mazzanti
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Common Base ◽  
Sige Bicmos

A 20dBm E-band power amplifier in SiGe BiCMOS technology

2012 ◽  
Author(s):  
Roee Ben Yishay ◽  
Roi Carmon ◽  
Oded Katz ◽  
Benny Sheinman ◽  
Danny Elad
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos

High-Efficiency SiGe-BiCMOS $E$ -Band Power Amplifiers Exploiting Current Clamping in the Common-Base Stage

2019 ◽  
Vol 54 (8) ◽  
pp. 2175-2185
Author(s):  
Elham Rahimi ◽  
Junlei Zhao ◽  
Francesco Svelto ◽  
Andrea Mazzanti
Keyword(s):  
Power Amplifiers ◽  
High Efficiency ◽  
Band Power ◽  
Common Base ◽  
Sige Bicmos ◽  
The Common

AKa-Band Power Amplifier with 22.9 dBm Psat, 22.5 dBm OP1dB and 21% PAE in 130 nm SiGe BiCMOS

2019 ◽  
Author(s):  
Qingfeng Zhang ◽  
Chenxi Zhao ◽  
Wen Feng ◽  
Yiming Yu ◽  
Huihua Liu ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Sige Bicmos

A 18-dBm G-Band Power Amplifier using 130-nm SiGe BiCMOS Technology

2019 ◽  
Author(s):  
Abdul Ali ◽  
Paolo Colantonio ◽  
Franco Giannini ◽  
Dietmar Kissinger ◽  
Herman Jalli Ng ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Band Power ◽  
Bicmos Technology ◽  
Sige Bicmos
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