Measurement of the Channel Temperature of a GaN Microwave Power Transistor During Pulsed I.V Excitation

2020 94th ARFTG Microwave Measurement Symposium (ARFTG) ◽

10.1109/arftg47584.2020.9071729 ◽

2020 ◽

Author(s):

Cristian Matei ◽

Haris Votsi ◽

Peter H. Aaen

Keyword(s):

Microwave Power ◽

Power Transistor ◽

Channel Temperature

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Modeling a microwave power transistor

10.1109/isscc.1971.1154925 ◽

1971 ◽

Author(s):

R. Harrison

Keyword(s):

Microwave Power ◽

Power Transistor

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New vertical silicon microwave power transistor structure and package with inherent thermal self protection

2009 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.2009.5165760 ◽

2009 ◽

Author(s):

Bishnu Gogoi ◽

Robert Davies ◽

Jeff Crowder ◽

David Lutz ◽

Phuong Le ◽

...

Keyword(s):

Microwave Power ◽

Power Transistor ◽

Transistor Structure ◽

Self Protection

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Recent developments in compound semiconductor microwave power transistor technology

IEE Proceedings - Circuits Devices and Systems ◽

10.1049/ip-cds:20040453 ◽

2004 ◽

Vol 151 (3) ◽

pp. 259 ◽

Author(s):

C.M. Snowden

Keyword(s):

Microwave Power ◽

Compound Semiconductor ◽

Power Transistor ◽

Recent Developments

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High performance S-band microwave power transistor

10.1109/iedm.1973.188737 ◽

1973 ◽

Author(s):

H.T. Yuan ◽

D.W. Mueller

Keyword(s):

Microwave Power ◽

High Performance ◽

Power Transistor

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A new technology for Si microwave power transistor manufacturing

1996 IEEE MTT-S International Microwave Symposium Digest ◽

10.1109/mwsym.1996.508473 ◽

2002 ◽

Author(s):

Ping Li ◽

T. Boles

Keyword(s):

Microwave Power ◽

New Technology ◽

Power Transistor

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The mixed mode 4H-SiC SIT as an S-band microwave power transistor

1996 54th Annual Device Research Conference Digest ◽

10.1109/drc.1996.546316 ◽

1996 ◽

Author(s):

R.C. Clarke ◽

A.K. Agarwal ◽

R.R. Siergiej ◽

C.D. Brandt ◽

A.W. Morse

Keyword(s):

Microwave Power ◽

Power Transistor

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SIMULATION OF INTRINSIC MATCHING NETWORKS' LOSSES OF MICROWAVE POWER TRANSISTOR AND ESTIMATION OF THEIR INFLUENCE ON TRANSISTOR PERFORMANCE

Electronic engineering. Series 2. Semiconductor device ◽

10.36845/2073-8250-2017-247-4-13-20 ◽

2017 ◽

Vol 247 (4) ◽

pp. 13-20

Author(s):

M.M. Krymko ◽

◽

S.V. Korneev ◽

S.M. Romanovskiy ◽

◽

...

Keyword(s):

Microwave Power ◽

Power Transistor ◽

Matching Networks

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Computer simulation of a microwave power transistor

IEEE Journal of Solid-State Circuits ◽

10.1109/jssc.1971.1050172 ◽

1971 ◽

Vol 6 (4) ◽

pp. 226-235 ◽

Author(s):

R.G. Harrison

Keyword(s):

Computer Simulation ◽

Microwave Power ◽

Power Transistor

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Application of active-load pulling to class-C microwave power transistor amplifier design

10.1109/isscc.1978.1155839 ◽

1978 ◽

Author(s):

G. Brehm ◽

J. Trippett ◽

D. Jenkins ◽

Cheng Wen

Keyword(s):

Microwave Power ◽

Power Transistor ◽

Transistor Amplifier ◽

Active Load ◽

Class C ◽

Amplifier Design

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Applications literature: Microwave power transistor design and circuit applications

IEEE Spectrum ◽

10.1109/mspec.1974.6366410 ◽

1974 ◽

Vol 11 (3) ◽

pp. 105-105

Keyword(s):

Microwave Power ◽

Power Transistor

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