Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

Broadband Performance Assessment of an RF Power Transistor Employing the Real Frequency Technique

selected active device is essential to design an RF power amplifier for optimum gain and power added efficiency. As they are obtained, these impedances may not be realizable network functions over the desired frequency band to yield the input and the output matching networks for the amplifier. Therefore, in this paper, first, we introduce a new method to test if a given impedance is realizable. Then, a novel “Real Frequency Line Segment Technique” based numerical procedure is introduced to assess the gain-bandwidth limitations of the given source and load impedances, which in turn results in the ultimate RF-power intake/ delivering performance of the amplifier. During the numerical performance assessments process, a robust tool called “Virtual Gain Optimization” is presented. Finally, a new definition called “Power-Performance-Product” is introduced to measure the quality of an active device. Examples are presented to test the realizability of the given source/load pull data and to assess the gain-bandwidth limitations of the given source/load pull impedances for a 45W-GaN power transistor, namely “Cree CG2H40045”, over 0.8 -3.8 GHz bandwidth.

Study of characteristics of n-p-n type bipolar power transistor in small-sized metalpolymeric package type SOT-89

In this study the input, output and current gain characteristics of silicon n-p-n type medium power bipolar junction transistors KT242A91 made by the "GRUPPA KREMNY EL" in modern small-sized metalpolymeric package type (SOT-89) have been obtained. The SPICE model that allows simulating realistic transistor behaviour of n-p-n type transistor KT242A91 has been proposed. It is shown that established experimental characteristics for KT242A91 transistor correspond to similar transistor’s type characteristics.

The High-Reliability Optimization of Dead-Time Circuit for Push-Pull DC-DC Converter

Aiming at of the problem of common conduction state in push-pull DC-DC converter’s power transistor, an optimization solution by improving pulse width modulation(PWM) mode and reasonable setting parameters of the transformer and the inductance was proposed. The solution was analyzed in detail and test of the optimized circuit are carried out. The results show that the optimized circuit can effectively eliminate common conduction state, make the converter have a suitable dead-time and greatly improve the reliability of the converter.

Investigations on the Use of the Power Transistor Source Inductance to Mitigate the Electromagnetic Emission of Switching Power Circuits

With power designers always demanding for faster power switches, electromagnetic interference has become an issue of primary concern. As known, the commutation of power transistors is the main cause of the electromagnetic noise, which can be worsened by the presence of unwanted oscillations superimposed onto the switching waveforms. This work proposes a solution to mitigate the oscillations caused by the turn-on of a power transistor by exploiting its source inductance plus an external one. In this context, an optimization method is proposed to find the optimal value of the source inductance as a trade-off between oscillation damping and power dissipation. The experimental results performed on a prototyped power converter assess the proposed technique as the spectrum of the conducted emission is attenuated by 20 dB at the oscillation frequency. With respect to traditional solution based on snubbers, the proposed solution results in a similar oscillation damping, but with a 0.5% higher power efficiency.

Evaluation of the Perspective Power Transistor Structures on Efficiency Performance of PFC Circuit

The aim of this work is to investigate the influence of circuit elements on the properties of the selected power factor correction (PFC) topology. Active or passive PFC serves to increase the power factor (PF) and reduce the total harmonic distortion (THD) of the mains current. As a result, the distribution network is lightened due to its interference caused by connected electronic devices. An important indicator of all electronic converters is efficiency. Therefore, the work deals with the analysis of possible efficiency improvements in conjunction with the use of technologically new active components. Detailed experimental analyses and optimization procedures are performed in terms of the influence of transistor structures (SiC and GaN) on the qualitative indicators of the proposed PFC converter for a wide operating spectrum. The synthesis of the obtained results is given, together with recommendations for optimal selection and optimal design of PFC main circuit elements with regard to achieving peak efficiency values.