CURRENT COLLAPSE MEASUREMENTS IN PULSED GAN TRANSISTORS

The article discusses the issues of design and methodology related to the current-voltage (I-V) characteristics of a GaN HEMT. Reliable I-V characteristics show the operability of a semiconductor device, provide initial data for functional application of the device, and provide insight into the quality and reproducibility of the technological process. The type and behavior of I–V characteristics are influenced by the design and technological features of a GaN HEMT. Measurements of I-V characteristics in continuous and pulsed operation modes provide more details about the electrical and thermal characteristics of the devices under study.

DESIGN AND TECHNOLOGICAL FEATURES OF CERAMIC-METAL TO-247 AND TO-220 SEMICONDUCTOR PACKAGES

In this paper we introduce the design of sealed ceramic-metal TO-247 and TO-220 packages, which are intended for the same applications as plactic-metal and glass-metal alternatives. Packages could be used for epitaxial Si and SiC multi-die assemblies, for GaN smart power switches, etc., with operating voltage up to 2500 V and pulsed current up to 350 A.

CREATION OF SPECIAL BATCHES OF DEVICES TO IMPROVE RELIABILITY OF ELECTRONIC COMPONENTS FOR SPACE APPLICATIONS

In this paper we give a brief historical background of the stages of work carried out by “ITC – NPO PM” JSC aimed at ensuring the long-term operation of electronic components for space applications. It is shown that the creation of specialized testing facilities is the optimal approach to make batches of electronic components of the Space quality level. We propose a further scenario to improve reliability of electronic components for space applications, involving the joint work of specialized testing facilities and manufacturing plants to make special batches of devices.

SPECTRAL TECHNIQUE FOR COMPLEX PROCESSING OF AEROSPACE MONITORING MULTISPECTRAL VIDEO DATA

The article studies the problem of increasing the efficiency of aerospace monitoring in identification of low-observable objects on the earth’s surface. The model of multispectral images based on spatial harmonic components is proposed. The article describes the algorithm of complex adaptive processing and image synthesis designed to improve identification of low-observable surface objects.

FACTORS AFFECTING THE LONG-TERM STABILITY OF MICROWAVE OSCILLATORS FOR SPACE ELECTRONIC EQUIPMEN

Main factors affecting the long-term stability of microwave oscillator frequency are discussed in this paper. External factors affect the signal frequency at the output of any actual source, causing it to continuously change over time. Long-term frequency instability could be attributed to aging of the material. So, it is necessary to take special environmental factors into account, when designing microwave oscillators for space electronic equipment.

DIGITAL SATELLITE MODEM RECEIVER DESIGNED WITH RUSSIAN-MADE ELECTRONIC COMPONENTS

In this paper we propose the design of the receiving path of an advanced satellite modem. The receiver comprises only the components produced by Russian domestic companies. The parameters of the receiver are discussed in the paper. 3D model of the receiver board obtained using the Altium Designer integrated computer-aided design (CAD) system is also presented.

FORMATION OF THE TWO-DIMENSIONAL ELECTRON GAS (2DEG) IN THE STRUCTURE WITH TWO AlxGa1-xN/GaN/AlуGa1-уN BARRIER LAYERS

This article is dedicated to the study of AlxGa1-xN/GaN/AlуGa1-уN heterostructures and spontaneous and piezoelectric polarizations, which induces 2DEG. In this research the surface charge density, the surface concentration of carriers in the channel and the relationship between the amount of Al molar fractions in upper and lower barrier layers and the surface charge density were determined. Change in the concentration of Al mole fractions in the upper barrier layer from 15 to 40, causes noticeable increase in the surface concentration of carriers ns(x). Change in the concentration of Al mole fractions in the lower barrier layer from 0.05 to 0.12, causes noticeable decrease in the surface concentration of ns carriers. The features of high-voltage HEMT with two barrier layers were considered. The introduction of the second barrier layer leads to a better electron confinement in the GaN channel, but at the same time, the maximum carrier density (2DEG) in the channel decreases and the voltage threshold shifts to the positive side.

TRACKING FILTER FOR RADAR SYSTEMS BASED ON GALLIUM NITRIDE TECHNOLOGY

This article is dedicated to the issues with detecting and tracking of targets, RCS fluctuations of which are described by the third case of Swerling, of radar systems based on gallium nitride technology. Authors describe the newly designed system of Kalman filters, which allows to set target trajectories, specify target coordinates, determine the area of movement, take into account the parameters of radar system power amplifiers, and also compensate for the target losses associated with the RCS fluctuation.

SOFTWARE FOR THE THERMAL FIELD CALCULATION IN 3D MODELS OF SEMICONDUCTOR DEVICES

In this paper we demonstrate the performance of the software designed for thermal model testing of solid-state microwave modules and compare it with the similar software ANSYS Icepak.