scholarly journals Advances in the development of high efficiency III-V multijunction solar cells on Ge|Si virtual substrates

Author(s):  
Victor Orejuela ◽  
Ivan Garcia ◽  
Clara Sanchez ◽  
Manuel Hinojosa ◽  
Shabnam Dadgostar ◽  
...  
2014 ◽  
Vol 1 (3-4) ◽  
Author(s):  
Nikhil Jain ◽  
Mantu K. Hudait

AbstractAchieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III–V compound semiconductor based solar cells have steadily shown performance improvement at ~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III–V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III–V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III–V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III–V-on-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III–V multijunction solar cells on Si are reviewed. Different technological routes for integrating III–V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III–V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III–V solar cell efficiencies, the future prospects for successful integration of III–V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.


Author(s):  
M. Rizwan

Solar cells convert sunlight into electricity directly. It is a reliable, non-toxic and pollution free source of electricity. Since 19th century researchers have been trying to investigate different materials for solar cell devices. Commercially, Si based solar are predominate in this field, however, with passage of time different materials have been reported. Solar cell techniques are based on three different generations. 1st generation is based on Si and 2nd generation includes thin-films of CuInGaSe, GaAs, CdTe and GaInP etc. whereas 3rd generation is based on organic, hybrid perovskites, quantum dot (QD)-sensitizers & dye-sensitizers solar cells. Among all these, the 3rd generation solar cells are the most efficient and more cost effective than 1nd and 2nd generation solar cells. The 2nd generation is less costly but also less efficient compared to 1st generation. 3rd generation faces degradation of the photovoltaic materials which is a major problem. In this chapter different reported materials since 19th century for solar cells are mentioned. The past and present scenarios of solar cells are discussed comprehensively. It is observed that Si-based and multijunction solar cells dominate the market. Although, theoretically it is reported that hybrid perovskites and quantum dot materials for solar cell are the most efficient materials for photovoltaic PV devices. In spite of the high efficiency the stability of organic, hybrid perovskites, QD-sensitizers &dye-sensitizer materials is a big challenge.


2014 ◽  
Vol 49 (8) ◽  
pp. NA-NA
Author(s):  
G. Timò ◽  
G. Abagnale ◽  
N. Armani ◽  
E. Malvisi ◽  
G. Carbi ◽  
...  

2011 ◽  
Vol 1321 ◽  
Author(s):  
A. Banerjee ◽  
D. Beglau ◽  
T. Su ◽  
G. Pietka ◽  
G. Yue ◽  
...  

ABSTRACTWe report on the investigation of large area a-Si:H/a-SiGe:H double-junction and a-Si:H/a-SiGe:H/a-SiGe:H triple-junction solar cells prepared by our proprietary High Frequency (HF) glow discharge technique. For investigative purposes, we initially used the simpler double-junction structure. We studied the effect of: (1) Ge content, (2) cell thickness, and (3) SiH4 and GeH4 gas flow on the light-induced degradation of the solar cells. Our results show that the double-junction cells with different Ge concentration have open-circuit voltage (Voc) in the range of 1.62-1.75 V. Voc exhibits a flat plateau in the range of 1.65-1.72 V for both initial and stabilized states. The light-induced degradation for cells in this range of Voc is insensitive to the Ge content. In terms of thickness dependence of the intrinsic layers, we found that the initial efficiency increases with cell thickness in the thickness range 2000-4000 Å. However, light-induced degradation increases with increasing thickness. Consequently, the stabilized efficiency is invariant with cell thickness in the thickness range studied. The results of SiH4 and GeH4 gas flow on cell characteristics demonstrate that the deposition rate decreases by only 20% when the active gas flow is reduced to 0.25 times standard flow. The initial and stabilized efficiencies are similar. The information gleaned from the study was used to fabricate high efficiency, large area (~464 cm2) double- and triple-junction solar cells. The highest stable efficiency, as measured by NREL, was 9.8% and 11.0% for the double- and triple-junction structures, respectively.


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