High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800 µm) based on epitaxially integrated triple heterostructures
2003 ◽
2006 ◽
2016 ◽
Vol 42
(12)
◽
pp. 1159-1162
◽
Antiguiding index profiles in broad strip semiconductor lasers for high-power, single-mode operation
1988 ◽
Vol 24
(3)
◽
pp. 489-495
◽
Keyword(s):
2012 ◽
Keyword(s):