scholarly journals Strong dependence of the Linewidth Enhancement Factor onto an externally injected optical signal for locked Fabry-Perot laser diodes

Author(s):  
Quoc-Thai Nguyen ◽  
Pascal Besnard ◽  
Olivier Vaudel ◽  
Alexandre Shen ◽  
Guang-Hua Duan
2008 ◽  
Vol 47 (3) ◽  
pp. 1606-1608 ◽  
Author(s):  
Naoki Kumazaki ◽  
Yohei Takagi ◽  
Mikito Ishihara ◽  
Kenichi Kasahara ◽  
Naota Akikusa ◽  
...  

2003 ◽  
Vol 18 (6) ◽  
pp. 486-490 ◽  
Author(s):  
Du Chang Heo ◽  
Il Ki Han ◽  
Jung Il Lee ◽  
Ji Chai Jeong ◽  
Si Hyung Cho

1999 ◽  
Vol 11 (12) ◽  
pp. 1527-1529 ◽  
Author(s):  
T.C. Newell ◽  
D.J. Bossert ◽  
A. Stintz ◽  
B. Fuchs ◽  
K.J. Malloy ◽  
...  

2015 ◽  
Vol 36 (5) ◽  
pp. 567-571
Author(s):  
许海鑫 XU Hai-xin ◽  
王海龙 WANG Hai-long ◽  
严进一 YAN Jin-yi ◽  
汪洋 WANG Yang ◽  
曹春芳 CAO Chun-fang ◽  
...  

2009 ◽  
Vol 21 (17) ◽  
pp. 1256-1258 ◽  
Author(s):  
A. Villafranca ◽  
A. Villafranca ◽  
G. Giuliani ◽  
I. Garces

2017 ◽  
Vol 38 (2) ◽  
Author(s):  
Taraprasad Chattopadhyay ◽  
Prosenjit Bhattacharyya ◽  
Chiranjib Ghosh

AbstractThis paper presents a simple method of linewidth enhancement factor (LEF) measurement of a semiconductor laser through narrowband optical frequency modulation (FM) generation by direct modulation. The narrowband optical FM is generated by using small-amplitude direct-current modulation, thereby limiting the resultant optical intensity modulation index level typically within 10%. The LEF is found to decrease linearly with the increase in bias current of the laser diode above threshold.


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