Pulsed laser deposition of high-Tc superconducting thin films for device applications

2005 ◽  
Author(s):  
C. Belouet
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films ◽  
High Tc ◽  
Device Applications

scholarly journals Pulsed Laser Deposition of High Tc Superconducting thin Films: Present and Future

1990 ◽  
Vol 191 ◽  
Author(s):  
X. D. Wu ◽  
T. Venkatesan ◽  
A. Inam ◽  
X. X. Xi ◽  
Q. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films ◽  
High Tc ◽  
The Future

ABSTRACTPulsed laser deposition (PLD) has been widely used for deposition of high Tc superconducting thin films, and is recognized as one of the best physical vapor techniques for the preparation of these films. The most important advantage of this technique is stoichiometric deposition; films can be made with the same composition as the target. Utilizing PLD, not only thin films but also multilayers and superlattices of high Tc superconductors have been fabricated. In this paper, the performance of the technique will be reviewed, and speculations regarding the future would be made.

scholarly journals Superconducting thin films of MgB2 on Si by pulsed laser deposition

2001 ◽  
Vol 353 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
A. Brinkman ◽  
D. Mijatovic ◽  
G. Rijnders ◽  
V. Leca ◽  
H.J.H. Smilde ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Laser‐target interactions during pulsed laser deposition of superconducting thin films

1991 ◽  
Vol 70 (10) ◽  
pp. 5433-5439 ◽  
Author(s):  
Deepika Bhattacharya ◽  
R. K. Singh ◽  
P. H. Holloway
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films ◽  
Laser Target

scholarly journals HgBa 2 Ca n-1 Cu n O 2n+2+δ Superconducting thin films Prepared by Pulsed Laser Deposition

2017 ◽  
Vol 119 ◽  
pp. 490-500 ◽  
Author(s):  
Bushra K.H. Al-Maiyaly ◽  
Ali H. Abd Alrazak ◽  
Hanaa I. Mohammed ◽  
Auday H. Shaban
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Superconducting Thin Films
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