Precise Laser Ablation with Ultra-Short Pulses

Author(s):  
C. Momma ◽  
S. Nolte ◽  
B. Chichkov ◽  
A. Tunnermann ◽  
F. von Alvensleben
Keyword(s):  
2016 ◽  
Vol 83 ◽  
pp. 1339-1346 ◽  
Author(s):  
Stefan Tatra ◽  
Rodrigo Gómez Vázquez ◽  
Christian Stiglbrunner ◽  
Andreas Otto

2012 ◽  
Vol 27 ◽  
pp. 537-542 ◽  
Author(s):  
T. Wütherich ◽  
K. Katkhouda ◽  
L. Bornschein ◽  
A. Grohe ◽  
H.J. Krokoszinski

2018 ◽  
Vol 82 ◽  
pp. 63-69 ◽  
Author(s):  
Madelyn Madrigal-Camacho ◽  
Alfredo Rafael Vilchis-Nestor ◽  
Marco Camacho-López ◽  
Miguel A. Camacho-López

2007 ◽  
Vol 15 (6) ◽  
pp. 521-527 ◽  
Author(s):  
Peter Engelhart ◽  
Sonja Hermann ◽  
Tobias Neubert ◽  
Heiko Plagwitz ◽  
Rainer Grischke ◽  
...  

Author(s):  
M. Grant Norton ◽  
C. Barry Carter

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.


2007 ◽  
Vol 177 (4S) ◽  
pp. 52-52
Author(s):  
Joshua M. Stem ◽  
Jer-Tsang Hsieh ◽  
Sangtae Park ◽  
Yair Lotan ◽  
Jeffrey A. Cadeddu

2006 ◽  
Vol 133 ◽  
pp. 511-514
Author(s):  
T. Matsuoka ◽  
A. Maksimchuk ◽  
T. Lin ◽  
O. V. Batishchev ◽  
A. A. Batishcheva ◽  
...  

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