Properties of InGaN-GaN multi-quantum well laser diode grown by low pressure metalorganic chemical vapor deposition
1993 ◽
Vol 29
(6)
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pp. 1528-1535
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1994 ◽
Vol 145
(1-4)
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pp. 256-262
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2008 ◽
Vol 310
(10)
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pp. 2514-2519
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