Electronic structure and thermal conductance of the MASnI3/Bi2Te3 interface: a first-principles study

To develop high-performance thermoelectric devices that can be created using printing technology, the interface of a composite material composed of MASnI3 and Bi2Te3, which individually show excellent thermoelectric performance, was studied based on first-principles calculations. The structural stability, electronic state, and interfacial thermal conductance of the interface between Bi2Te3 and MASnI3 were evaluated. Among the interface structure models, we found stable interface structures and revealed their specific electronic states. Around the Fermi energy, the interface structures with TeII and Bi terminations exhibited interface levels attributed to the overlapping electron densities for Bi2Te3 and MASnI3 at the interface. Calculation of the interfacial thermal conductance using the diffuse mismatch model suggested that construction of the interface between Bi2Te3 and MASnI3 could reduce the thermal conductivity. The obtained value was similar to the experimental value for the inorganic/organic interface.

Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth

A recent study has shown that anomalous positive fixed charge is generated at SiO2/GaN interfaces by forming gas annealing (FGA). Here, we conducted systematic physical and electrical characterizations of GaN-based metal-oxide-semiconductor (MOS) structures to gain insight into the charge generation mechanism and to design optimal interface structures. A distinct correlation between the amount of FGA-induced fixed charge and interface oxide growth indicated the physical origins of the fixed charge to be defect formation driven by reduction of the Ga-oxide (GaOx) interlayer. This finding implies that, although post-deposition annealing in oxygen compensates for oxygen deficiencies and FGA passivates defect in GaN MOS structures, excessive interlayer GaOx growth leads to instability in the subsequent FGA treatment. On the basis of this knowledge, SiO2/GaOx/GaN MOS devices with improved electrical properties were fabricated by precisely controlling the interfacial oxide growth while taking advantage of defect passivation with FGA.

Hierarchical Structure Fabrication of IPMC Strain Sensor With High Sensitivity

In this paper, a biological template method is introduced and investigated to fabricate ionic polymer-metal composite (IPMC) strain sensor with bionic hierarchical structures. We utilized the multi-level structure of reed leaf surface, which can improve the contact area between the substrate and the electrode layers. Hierarchical structures were observed on the IPMC samples, including pyramid strips with the width in the range of 60–80 μm as well as synaptic scatters with diameter around 10 μm. In addition, five kinds of sensors with different interface structures were obtained by combining the traditional microneedle roller roughening and chemical plating processes. It was found that the IPMC sensor with reed-leaf and microneedle structure on each side presented the best performance, along with a high linearity, a sensitivity of 62.5 mV/1% and a large generated voltage peak under given mechanical stimuli, which is 3.7 times that of the sample fabricated without roughening.