metalorganic chemical
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scholarly journals Study of Ga2O3 deposition by MOCVD

2021 ◽  
Vol 2103 (1) ◽  
pp. 012092
Author(s):  
W V Lundin ◽  
S N Rodin ◽  
A V Sakharov ◽  
M A Yagovkina ◽  
A N Smirnov ◽  
...  
Keyword(s):  
Growth Rate ◽  
Wide Temperature Range ◽  
Vapour Deposition ◽  
Flow Reactor ◽  
Chemical Vapour ◽  
Temperature Growth ◽  
Device Applications ◽  
Metalorganic Chemical Vapour Deposition ◽  
Thick Layers ◽  
Metalorganic Chemical

Abstract Growth of Ga2O3 by metalorganic chemical vapour deposition in horizontal flow reactor from trimethylgallium (TMG) and oxygen is studied in a wide temperature range. The growth rate is directly proportional to TMG flow, weakly affected by O2 flow and non-monotonically depends on temperature. Growth rate over 3 μm/h is demonstrated, indicating that TMG can be used for growth of β-Ga2O3 thick layers for device applications.

scholarly journals Metalorganic chemical vapor deposition of α-Ga2O3 and α-(AlxGa1−x)2O3 thin films on m-plane sapphire substrates

APL Materials ◽  
2021 ◽  
Vol 9 (10) ◽  
pp. 101109
Author(s):  
A F M Anhar Uddin Bhuiyan ◽  
Zixuan Feng ◽  
Hsien-Lien Huang ◽  
Lingyu Meng ◽  
Jinwoo Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Sapphire Substrates ◽  
Metalorganic Chemical
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