Simulation of Energy Schemes and Electron Spectrum in Plane Nitride Semiconductor Nanostructures

2019 ◽  
Author(s):  
Igor Boyko ◽  
Halyna Tsupryk ◽  
Iaroslav Kinakh ◽  
Yurii Stoianov
Keyword(s):  
Electron Spectrum ◽  
Semiconductor Nanostructures ◽  
Nitride Semiconductor

Theoretical modeling of growth processes, extended defects, and electronic properties of III-nitride semiconductor nanostructures

2011 ◽  
Vol 248 (8) ◽  
pp. 1837-1852 ◽  
Author(s):  
Liverios Lymperakis ◽  
Hazem Abu-Farsakh ◽  
Oliver Marquardt ◽  
Tilmann Hickel ◽  
Jörg Neugebauer
Keyword(s):  
Electronic Properties ◽  
Semiconductor Nanostructures ◽  
Theoretical Modeling ◽  
Extended Defects ◽  
Growth Processes ◽  
Nitride Semiconductor

scholarly journals Matrix-seeded growth of nitride semiconductor nanostructures using ion beams

2005 ◽  
Vol 97 (6) ◽  
pp. 064301 ◽  
Author(s):  
X. Weng ◽  
W. Ye ◽  
S. J. Clarke ◽  
R. S. Goldman ◽  
V. Rotberg ◽  
...  
Keyword(s):  
Semiconductor Nanostructures ◽  
Ion Beams ◽  
Seeded Growth ◽  
Nitride Semiconductor

Multiscale Computational Model of Nitride Semiconductor Nanostructures

2012 ◽  
Vol 560-561 ◽  
pp. 1133-1137
Author(s):  
Karine Abgaryan ◽  
Ilya Mutigullin ◽  
Dmitriy Bazhanov
Keyword(s):  
Experimental Data ◽  
Density Functional ◽  
Kinetic Monte Carlo ◽  
Multiscale Model ◽  
Semiconductor Nanostructures ◽  
Adhesion Energy ◽  
Functional Theory ◽  
Semiconductor Nanostructure ◽  
Structural And Electronic Properties ◽  
Nitride Semiconductor

Theoretical multiscale model of nitride semiconductor nanostructure is proposed. The model combines various computational methods such as density functional theory, molecular dynamics and kinetic Monte Carlo. As a first step of implementation of proposed approach ab initio calculations of structural and electronic properties of two different structures InN/Si and AlN/AlGaN/GaN heterostructures were carried out. In particular, the influence of oxygen on InN/Si adhesion energy was studied. AlN, GaN, AlxGa1-xN (x=0.33) spontaneous and piezoelectric polarizations as well as sheet carrier concentrations at GaN/AlGaN interface were calculated. Obtained value for sheet carrier concentration at GaN/AlGaN interface is close to experimental data.

Spontaneous ordering of semiconductor nanostructures

1997 ◽  
Vol 167 (5) ◽  
pp. 552
Author(s):  
D. Bimberg ◽  
Iya P. Ipatova ◽  
Petr S. Kop'ev ◽  
N.N. Ledentsov ◽  
V.G. Malyshkin ◽  
...  
Keyword(s):  
Semiconductor Nanostructures

Tunneling features in semiconductor nanostructures

2017 ◽  
Vol 187 (11) ◽  
pp. 1147-1168 ◽  
Author(s):  
Petr I. Arseev ◽  
Vladimir N. Mantsevich ◽  
N.S. Maslova ◽  
Vladimir I. Panov
Keyword(s):  
Semiconductor Nanostructures
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