RADIATION INDUCED SOFTENING OF CRYSTALS

Under irradiation of crystals, atomic vibrations of the lattice that are large enough in amplitude so that the linear approximation and therefore the conventional phonon description of the lattice is not enough. At the same time, these vibrations are localized and can travel long distances in a crystal lattice [1, 2]. In metals and other crystals, they are called discrete breathers (DBs), which are the secondary products of irradiation damage, the primary one being the creations of defects that involve atom displacements to produce point and extended defects, which results in radiation induced hardening (RIH). A part of the remaining energy transforms in DBs before decaying into pho-nons. Thus, while a material is being irradiated in operational conditions, as in a reactor, a considerable amount of DBs with energies of the order of one eV is produced, which helps dislocations to unpin from pinning centers, pro-ducing Radiation Induced Softening (RIS), which opposes RIH [3, 4]. This effect is investigated under (in-situ) im-pulse and steady-state electron irradiation.

Magnetic particles and strings in iron langasite

Magnetic topological defects can store and carry information. Replacement of extended defects, such as domain walls and Skyrmion tubes, by compact magnetic particles that can propagate in all three spatial directions may open an extra dimension in the design of magnetic memory and data processing devices. We show that such objects can be found in iron langasite, which exhibits a hierarchy of non-collinear antiferromagnetic spin structures at very different length scales. We derive an effective model describing long-distance magnetic modulations in this chiral magnet and find unusual two- and three-dimensional topological defects. The order parameter space of our model is similar to that of superfluid 3He-A, and the particle-like magnetic defect is closely related to the Shankar monopole and hedgehog soliton in the Skyrme model of baryons. Mobile magnetic particles stabilized in non-collinear antiferromagnets can play an important role in antiferromagnetic spintronics.

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.

Wafer fusion technique features for near-IR laser sources

The paper presents the results of studies of the conditions for the formation of A3B5 compound semiconductors heterointerfaces including InP, InGaAsP and GaAs layers. The heterostructures were grown by molecular-beam epitaxy and were fused by wafer fusion technique. Improvement of planarity and homogeneity over the thickness of heterointerface due to using optimized preliminary preparation of semiconductor wafer surfaces was demonstrated. No additional extended defects such as dislocations were found.

Peri-implantitis: explantation versus peri-implant regeneration

Peri-implantitis is a complication in implantprosthetic rehabilitation that causes morpho-functional, masticatory and aesthetic disorders. Depending on the severity it can be approached by conservative surgical or radical treatment. The aim of the paper is the comparative analysis of conservative surgical methods (implant preservation) versus radical (explantation). We studied 2 patients who came to the SRL “Omni Dent” clinic with peri-implantitis. Manifestation, treatment and evolution in both patients were compared. Analysis criteria: bone defect extension, soft tissue appearance, tissue regeneration, implant-prosthetic rehabilitation time. In RI patient there were changes in color and appearance of the peri-implant soft tissues (hyperemia, edema, purulent discharge), peri-implant radiolucency on the entire implant surface; in the TM patient there were the same clinical signs but limited to ½ implant length. RI patient underwent explantation with re-implantation in the neighboring region 2.4 after 4 months with prosthesis fixing after another 4 months. Tissue regeneration evolved without complications. In TM patient was decided to keep the implant through curettage, implantoplasty and bone addition. Prosthetic rehabilitation followed later without complications. Timely addressing would prevent the development of complications with implant loss. The insignificant loss of peri-implant tissues can be recovered with the preservation of the implant, in the extended defects the optimal solution is the explantation with the subsequent implantprosthetic rehabilitation.

Effective Magnetic Field Dependence of the Flux Pinning Energy in FeSe0.5Te0.5 Superconductor

The role of a layered structure in superconducting pinning properties is still at a debate. The effects of the vortex shape, which can assume for example a staircase form, could influence the interplay with extrinsic pinning coming from the specific defects of the material, thus inducing an effective magnetic field dependence. To enlighten this role, we analysed the angular dependence of flux pinning energy U(H,θ) as a function of magnetic field in FeSe0.5Te0.5 thin film by considering the field components along the ab-plane of the crystal structure and the c-axis direction. U(H,θ) has been evaluated from magneto-resistivity measurements acquired at different orientations between the applied field up to 16 T and FeSe0.5Te0.5 thin films grown on a CaF2 substrate. We observed that the U(H,θ) shows an anisotropic trend as a function of both the intensity and the direction of the applied field. Such a behaviour can be correlated to the presence of extended defects elongated in the ab-planes, thus mimicking a layered superconductor, as we observed in the microstructure of the compound. The comparison of FeSe0.5Te0.5 with other superconducting materials provides a more general understanding on the flux pinning energy in layered superconductors.

Microstructural Characterization of a Single Crystal Copper Rod Using Monochromatic Neutron Radiography Scan and Tomography: A Test Experiment

This paper reports the analysis of a single crystal copper rod aiming to characterize the microstructural features related to the homogeneity of the single crystal growth and the presence, shape and extension of spatially distributed misaligned grains or areas. The analytical method used for such analysis is wavelength scan neutron radiography and monochromatic neutron tomography. Such methods allow determination of the extent of differently oriented single crystal areas, identifying the most part of the rod volume as a single domain. It was also possible to characterize the spatial distribution and the degree of alignment of local point-like or extended defects.