Engineering metal oxide semiconductor nanostructures for enhanced charge transfer: fundamentals and emerging SERS applications

Fundamentals of doping engineering strategies of metal oxide semiconductors and various charge transfer processes for emerging SERS applications are discussed.

Size effect in piezoelectric semiconductor nanostructures

A gradient theory is applied to the mechanical constitutive equations for piezoelectric semiconductor nanostructures. This is achieved by considering the strain gradients in the constitutive equation with high-order stresses and electric displacements in advanced continuum model. The C1 continuous interpolations of displacements or a mixed formulation is required in the finite element method (FEM) due to the presence of the second-order derivative on the elastic displacements. A mixed FEM is then developed from the principle of virtual work. Numerical examples clearly show the significant effect of flexoelectricity on the induced electric potential and electric current in the piezoelectric semiconductor nanostructures.

Novel Properties of Semiconductor Nanowires

Semiconductor nanowires guarantee to give the structure squares to another age of nanoscale electronic and optoelectronic gadgets and display novel electronic and optical properties inferable from their special underlying one-dimensionality and conceivable quantum confinement impacts in two measurements. With an expansive choice of creations and band structures, these one-dimensional semiconductor nanostructures are viewed as the basic segments in a wide scope of potential nanoscale device applications. This review paper explains the basic properties showed by semiconductor nanowires. Novel properties including nanowire miniature hole lasing, phonon transport, interfacial security, and synthetic detecting are reviewed.

MATLAB Wavelet analysis of electron energy spectrum in one-dimensional quantum well with infinitely high walls for Al-Ga-As system (0 < x < 1)

This paper presents calculations of electronic states in AlxGa1-x As semiconductor nanostructures and simulates the envelope wave functions of quantum energy levels in a one-dimensional quantum well with infinitely high walls of a given width at various values of x. For the analysis of results the authors choose the function wtmm from the Matlab library that fixes the extremums and which is a characteristic of the fractality of the envelope wave functions of quantum energy levels.

MATLAB Modelling electron energy spectrum in one-dimensional quantum well with infinitely high walls for GaAs solid solution

The paper presents calculations of electron states in semiconductor nanostructures AlxGa1–x As (x=0) and simulates the energy spectrum of the electron in a one-dimensional quantum well with infinitely high walls of a given width (from 10 to 30 atomic monolayers) using MATLAB application. The data is visualized using a wavelet transform with different wavelet functions.