Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)

International Symposium on Electromagnetic Compatibility - EMC EUROPE ◽

10.1109/emceurope.2012.6396757 ◽

2012 ◽

Author(s):

Liang Zhou ◽

Liang Lin ◽

Wei Luo ◽

Wen-Yan Yin

Keyword(s):

Power Amplifiers ◽

Electromagnetic Pulse ◽

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Design Considerations for GaAs MESFET RF Power Amplifiers

Analog Circuit Design ◽

10.1007/978-1-4757-2983-2_18 ◽

1999 ◽

pp. 395-413

Author(s):

Stewart S. Taylor

Keyword(s):

Power Amplifiers ◽

Rf Power Amplifiers ◽

Rf Power ◽

Design Considerations ◽

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Design and Fabrication Techniques for Lumped-Element GaAs MESFET Power Amplifiers Using Automated Assembly Procedures

10.1109/mwsym.1982.1130650 ◽

2005 ◽

Author(s):

J.B. Klatskin ◽

R.L. Camisa ◽

D. Haggis

Keyword(s):

Power Amplifiers ◽

Automated Assembly ◽

Lumped Element ◽

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A self-aligned gate GaAs MESFET with p-pocket layers for high-efficiency linear power amplifiers

IEEE Transactions on Electron Devices ◽

10.1109/16.701466 ◽

1998 ◽

Vol 45 (7) ◽

pp. 1385-1392 ◽

Author(s):

K. Nishihori ◽

Y. Kitaura ◽

M. Hirose ◽

M. Mihara ◽

M. Nagaoka ◽

...

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

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High reliability GaAs MESFET for suppressed hot-electron-induced degradation of high efficiency power amplifiers

1997 GaAs Reliability Workshop Proceedings GAASRW-97 ◽

10.1109/gaasrw.1997.656143 ◽

2002 ◽

Author(s):

Y.A. Tkachenko ◽

C.J. Wei ◽

D. Bartle

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

High Reliability ◽

Hot Electron ◽

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Nonlinear design procedures for single-frequency and broad-band GaAs MESFET power amplifiers

IEEE Transactions on Microwave Theory and Techniques ◽

10.1109/22.3527 ◽

1988 ◽

Vol 36 (2) ◽

pp. 388-393 ◽

Author(s):

T.J. Brazil ◽

S.O. Scanlan

Keyword(s):

Power Amplifiers ◽

Single Frequency ◽

Design Procedures ◽

Gaas Mesfet ◽

Nonlinear Design

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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

IEEE Journal of Solid-State Circuits ◽

10.1109/4.868037 ◽

2000 ◽

Vol 35 (9) ◽

pp. 1285-1292 ◽

Author(s):

Karthikeyan Krishnamurthy ◽

Ramakrishna Vetury ◽

S. Keller ◽

U. Mishra ◽

M.J.W. Rodwell ◽

...

Keyword(s):

Power Amplifiers ◽

Gan Hemt ◽

Gaas Mesfet ◽

Resistive Feedback

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Synthesis of Distributed Networks with Applications to the Design of Ultra-Wideband GaAs MESFET Power Amplifiers

10.1109/mwsym.1980.1124296 ◽

2005 ◽

Author(s):

W.H. Ku ◽

H.A. Willing

Keyword(s):

Power Amplifiers ◽

Distributed Networks ◽

Ultra Wideband ◽

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Electrothermal breakdown of an intentional electromagnetic pulse injected into Ku-band gaas Mesfet-based low noise amplifier(LNA)

2012 IEEE International Symposium on Electromagnetic Compatibility ◽

10.1109/isemc.2012.6351827 ◽

2012 ◽

Author(s):

Liang Lin ◽

Liang Zhou ◽

Wen-Yan Yin ◽

Lin-Juan Huang

Keyword(s):

Electromagnetic Pulse ◽

Low Noise ◽

Low Noise Amplifier ◽

Gaas Mesfet ◽

Noise Amplifier ◽

Electrothermal Breakdown ◽

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Computer Aided Design of GaAs Mesfet Power Amplifiers

10.1109/euma.1982.333100 ◽

1982 ◽

Author(s):

Carlo Naldi ◽

Fabio Filicori

Keyword(s):

Power Amplifiers ◽

Computer Aided Design ◽

Gaas Mesfet ◽

Computer Aided ◽

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mm-Wave Silicon Power Amplifiers and Transmitters

10.1017/cbo9781107295520 ◽

2016 ◽

Keyword(s):

Power Amplifiers

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