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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers
IEEE Journal of Solid-State Circuits
◽
10.1109/4.868037
◽
2000
◽
Vol 35
(9)
◽
pp. 1285-1292
◽
Cited By ~ 30
Author(s):
Karthikeyan Krishnamurthy
◽
Ramakrishna Vetury
◽
S. Keller
◽
U. Mishra
◽
M.J.W. Rodwell
◽
...
Keyword(s):
Power Amplifiers
◽
Gan Hemt
◽
Gaas Mesfet
◽
Resistive Feedback
Download Full-text
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Hybrid Analog/Digital Linearization of GaN HEMT-Based Power Amplifiers
IEEE Transactions on Microwave Theory and Techniques
◽
10.1109/tmtt.2018.2880911
◽
2019
◽
Vol 67
(1)
◽
pp. 288-294
◽
Cited By ~ 6
Author(s):
Pedro M. Tome
◽
Filipe M. Barradas
◽
Telmo R. Cunha
◽
Jose Carlos Pedro
Keyword(s):
Power Amplifiers
◽
Gan Hemt
◽
Digital Linearization
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10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
2019 49th European Microwave Conference (EuMC)
◽
10.23919/eumc.2019.8910887
◽
2019
◽
Author(s):
C. Potier
◽
J-C Jacquet
◽
C. Lacam
◽
N. Michel
◽
C. Dua
◽
...
Keyword(s):
Power Amplifiers
◽
Ka Band
◽
Gan Hemt
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18GHz-/28GHz-Band Gain-Boosted Feedback Power Amplifiers Using Affordable GaN HEMT MMIC Process
2018 Asia-Pacific Microwave Conference (APMC)
◽
10.23919/apmc.2018.8617148
◽
2018
◽
Author(s):
Tsukasa Yasui
◽
Ryo Ishikawa
◽
Kazuhiko Honjo
Keyword(s):
Power Amplifiers
◽
Gan Hemt
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Modeling of High Frequency and High Efficiency GaN HEMT Power Amplifiers Based on the Developed Transistor Model (EEHEMT)
2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus)
◽
10.1109/eiconrus.2019.8657314
◽
2019
◽
Cited By ~ 1
Author(s):
Myo Min Thant
◽
Vitaly A. Romanjuk
◽
Lwin Moe Khaing
◽
Naing Htun Lin
◽
Nikolai V. Guminov
Keyword(s):
Power Amplifiers
◽
High Frequency
◽
High Efficiency
◽
Gan Hemt
◽
Transistor Model
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Design Considerations for GaAs MESFET RF Power Amplifiers
Analog Circuit Design
◽
10.1007/978-1-4757-2983-2_18
◽
1999
◽
pp. 395-413
Author(s):
Stewart S. Taylor
Keyword(s):
Power Amplifiers
◽
Rf Power Amplifiers
◽
Rf Power
◽
Design Considerations
◽
Gaas Mesfet
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Investigation on conductive electromagnetic pulse (EMP) effects on the breakdown of GaAs MESFET-built power amplifiers (PA)
International Symposium on Electromagnetic Compatibility - EMC EUROPE
◽
10.1109/emceurope.2012.6396757
◽
2012
◽
Author(s):
Liang Zhou
◽
Liang Lin
◽
Wei Luo
◽
Wen-Yan Yin
Keyword(s):
Power Amplifiers
◽
Electromagnetic Pulse
◽
Gaas Mesfet
Download Full-text
Output harmonic termination techniques for AlGaN/GaN HEMT power amplifiers using active integrated antenna approach
2002 IEEE MTT-S International Microwave Symposium Digest (Cat. No.02CH37278)
◽
10.1109/mwsym.2002.1011648
◽
2003
◽
Cited By ~ 1
Author(s):
Younkyu Chung
◽
C.Y. Hang
◽
Shujun Cai
◽
Yongxi Qian
◽
C.P. Wen
◽
...
Keyword(s):
Power Amplifiers
◽
Gan Hemt
◽
Active Integrated Antenna
◽
Integrated Antenna
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Design and Fabrication Techniques for Lumped-Element GaAs MESFET Power Amplifiers Using Automated Assembly Procedures
10.1109/mwsym.1982.1130650
◽
2005
◽
Author(s):
J.B. Klatskin
◽
R.L. Camisa
◽
D. Haggis
Keyword(s):
Power Amplifiers
◽
Automated Assembly
◽
Lumped Element
◽
Gaas Mesfet
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GaN-HEMT nonlinear modeling of single-ended and Doherty high-power amplifiers
2014 44th European Microwave Conference
◽
10.1109/eumc.2014.6986686
◽
2014
◽
Cited By ~ 1
Author(s):
Rached Hajji
◽
Matthew Poulton
◽
D. B. Crittenden
◽
Jeff Gengler
◽
Peter Xia
Keyword(s):
High Power
◽
Power Amplifiers
◽
Nonlinear Modeling
◽
Gan Hemt
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A new GaN HEMT nonlinear model for evaluation and design of 1–2 watt power amplifiers
2012 IEEE 55th International Midwest Symposium on Circuits and Systems (MWSCAS)
◽
10.1109/mwscas.2012.6291955
◽
2012
◽
Cited By ~ 2
Author(s):
Nick L. Marcoux
◽
Christopher J. Fisher
◽
Doug White
◽
John Lachapelle
◽
Tomas Palacios
◽
...
Keyword(s):
Nonlinear Model
◽
Power Amplifiers
◽
Gan Hemt
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