scholarly journals Vapor-phase silanization of oxidized porous silicon for stabilizing composition and photoluminescence

2009 ◽  
Vol 105 (11) ◽  
pp. 114307 ◽  
Author(s):  
Hong-Liang Li ◽  
Yingchun Zhu ◽  
Dongsheng Xu ◽  
Yong Wan ◽  
Linhua Xia ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Vapor Phase ◽  
Oxidized Porous Silicon

scholarly journals Anisotropic polarization memory in thermally oxidized porous silicon

2000 ◽  
Vol 77 (15) ◽  
pp. 2316-2318 ◽  
Author(s):  
Hideki Koyama ◽  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon

Optical gain in dye-doped polymer waveguides using oxidized porous silicon cladding

2007 ◽  
Author(s):  
Daniel Navarro-Urrios ◽  
Mher Ghulinyan ◽  
Paolo Bettotti ◽  
Néstor Capuj ◽  
Claudio J. Oton ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Optical Gain ◽  
Polymer Waveguides ◽  
Oxidized Porous Silicon ◽  
Doped Polymer

Observation of quantum-confined luminescence in partially oxidized porous silicon

2000 ◽  
Vol 80 (4) ◽  
pp. 679-689 ◽  
Author(s):  
Giampiero Amato ◽  
L. Boarino ◽  
D. Midellino ◽  
A. M. Rossi
Keyword(s):  
Porous Silicon ◽  
Oxidized Porous Silicon ◽  
Quantum Confined

Synthesis of porous silicon, nickel and carbon layers by vapor phase dealloying

2021 ◽  
pp. 127812
Author(s):  
Stefan Saager ◽  
Bert Scheffel ◽  
Thomas Modes ◽  
Olaf Zywitzki
Keyword(s):  
Porous Silicon ◽  
Vapor Phase

Strongly Superlinear Light Emission and Large Induced Absorption in Oxidized Porous Silicon Films

1998 ◽  
Vol 536 ◽  
Author(s):  
H. Koyama ◽  
P. M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Thermal Effects ◽  
Light Emission ◽  
Laser Intensity ◽  
Excitation Intensity ◽  
Silicon Films ◽  
Free Standing ◽  
Induced Absorption ◽  
Cw Laser ◽  
Oxidized Porous Silicon

AbstractThe optical properties of oxidized free-standing porous silicon films excited by a cw laser have been investigated. It is found that samples oxidized at 800–950 °C show a strongly superlinear light emission at an excitation intensity of ∼10 W/cm2. This emission has a peak at 900–1100 nm and shows a blueshift as the oxidation temperature is increased. These samples also show a very large induced absorption, where the transmittance is found to decrease reversibly by ≤99.7 %.The induced absorption increases linearly with increasing pump laser intensity. Both the superlinear emission and the large induced absorption are quenched when the samples are attached to materials with a higher thermal conductivity, suggesting that laser-induced thermal effects are responsible for these phenomena.

Using an oxidized porous silicon interferometer for determination of relative protein binding affinity through non-covalent capture probe immobilization

2007 ◽  
Vol 204 (5) ◽  
pp. 1444-1448 ◽  
Author(s):  
Michael P. Schwartz ◽  
Christine Yu ◽  
Sara D. Alvarez ◽  
Benjamin Migliori ◽  
Denis Godin ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Protein Binding ◽  
Binding Affinity ◽  
Capture Probe ◽  
Oxidized Porous Silicon

Visible Photoluminescence from Anodically Oxidized Porous Silicon

1994 ◽  
Vol 33 (Part 2, No. 7A) ◽  
pp. L941-L944 ◽  
Author(s):  
Toshimichi Ito ◽  
Kenji Motoi ◽  
Osamu Arakaki ◽  
Akimitsu Hatta ◽  
Akio Hiraki
Keyword(s):  
Porous Silicon ◽  
Visible Photoluminescence ◽  
Oxidized Porous Silicon
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