Fundamental oscillation up to 1.31 THz in thin-well resonant tunneling diodes

2012 ◽  
Author(s):  
H. Kanaya ◽  
H. Shibayama ◽  
S. Suzuki ◽  
M. Asada
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Fundamental Oscillation

Fundamental Oscillation up to 1.31 THz in Resonant Tunneling Diodes with Thin Well and Barriers

2012 ◽  
Vol 5 (12) ◽  
pp. 124101 ◽  
Author(s):  
Hidetoshi Kanaya ◽  
Hirotaka Shibayama ◽  
Riku Sogabe ◽  
Safumi Suzuki ◽  
Masahiro Asada
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Fundamental Oscillation

Fundamental oscillation of resonant tunneling diodes above 1 THz at room temperature

2010 ◽  
Vol 97 (24) ◽  
pp. 242102 ◽  
Author(s):  
Safumi Suzuki ◽  
Masahiro Asada ◽  
Atsushi Teranishi ◽  
Hiroki Sugiyama ◽  
Haruki Yokoyama
Keyword(s):  
Resonant Tunneling ◽  
Room Temperature ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Fundamental Oscillation

scholarly journals Fundamental oscillation up to 1.08THz in resonant tunneling diodes with high-indium-composition transit layers for reduction of transit delay

2012 ◽  
Vol 9 (5) ◽  
pp. 385-390 ◽  
Author(s):  
Atsushi Teranishi ◽  
Kaoru Shizuno ◽  
Safumi Suzuki ◽  
Masahiro Asada ◽  
Hiroki Sugiyama ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes ◽  
Indium Composition ◽  
Fundamental Oscillation ◽  
Transit Delay

Fundamental Oscillation of up to 915 GHz in Small-Area InGaAs/AlAs Resonant Tunneling Diodes with Planar Slot Antennas

2010 ◽  
Vol 49 (2) ◽  
pp. 020211 ◽  
Author(s):  
Masato Shiraishi ◽  
Safumi Suzuki ◽  
Atsushi Teranishi ◽  
Masahiro Asada ◽  
Hiroki Sugiyama ◽  
...  
Keyword(s):  
Small Area ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Slot Antennas ◽  
Tunneling Diodes ◽  
Fundamental Oscillation

Nanofabricated SiO2-Si-SiO2 Resonant Tunneling Diodes

2000 ◽  
Vol 631 ◽  
Author(s):  
J. G. Fleming ◽  
E. Chow ◽  
S.-Y. Lin
Keyword(s):  
Integrated Circuits ◽  
Integrated Circuit ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Resonance Tunneling ◽  
Tunneling Diodes

ABSTRACTResonance Tunneling Diodes (RTDs) are devices that can demonstrate very highspeed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. We report here the first demonstration of SiO2-Si-SiO2 RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.

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