1.2 kV regrown GaN vertical p-n power diodes with ultra low leakage using advanced materials engineering

Author(s):  
Kai Fu ◽  
Houqiang Fu ◽  
Hanxiao Liu ◽  
Shanthan Reddy Alugubelli ◽  
Xuanqi Huang ◽  
...  
Author(s):  
Maria Manousidaki ◽  
Vladimir Y. Fedorov ◽  
Dimitrios G. Papazoglou ◽  
Maria Farsari ◽  
Stylianos Tzortzakis

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