In Situ Monitoring of Pulsed Laser Annealing of Eu-Doped Oxide Thin Films

Eu3+-doped oxide thin films possess a great potential for several emerging applications in optics, optoelectronics, and sensors. The applications demand maximizing Eu3+ photoluminescence response. Eu-doped ZnO, TiO2, and Lu2O3 thin films were deposited by Pulsed Laser Deposition (PLD). Pulsed UV Laser Annealing (PLA) was utilized to modify the properties of the films. In situ monitoring of the evolution of optical properties (photoluminescence and transmittance) at PLA was realized to optimize efficiently PLA conditions. The changes in optical properties were related to structural, microstructural, and surface properties characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). The substantial increase of Eu3+ emission was observed for all annealed materials. PLA induces crystallization of TiO2 and Lu2O3 amorphous matrix, while in the case of already nanocrystalline ZnO, rather surface smoothening0related grains’ coalescence was observed.

Tuning the Magnetic Properties of Sn1-x-yCe4+xCe3+yO2 Nanoparticles: an Experimental and Theoretical Approach

During the last decade, there was a substantial increase in the research on metal-doped oxide semiconductors nanoparticles due to advances in the engineering of nanomaterials and their potential application in...

Electrochemical behaviour of uranium at a tripolyphosphate modified ITO electrode

Tripolyphosphate modified mesoporous indium tin-doped oxide electrodes (nanoITO|P3) electrocatalyze the interconversion of bound UO22+ and U4+.