13.56-MHz Class-E RF power amplifier using normally-on GaN HEMT

2014 ◽  
Author(s):  
Masayuki Okamoto ◽  
Toshihiko Tanaka ◽  
Koyo Matuzaki ◽  
Tamotsu Hashizume ◽  
Hiroaki Yamada
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Class E

scholarly journals 2.45 GHz Class E Power Amplifier for a Transmitter Combining LINC and EER

10.14311/1137 ◽  
2009 ◽  
Vol 49 (2) ◽  
Author(s):  
M. Dirix ◽  
O. Koch
Keyword(s):  
Power Amplifier ◽  
Input Circuit ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Supply Modulation ◽  
Class E

A 10 W class-E RF power amplifier (PA) is designed and fabricated using a Cree GaN HEMT. The proposed PA uses an innovative input circuit to optimize band with. At 2.45 GHz the PA achieves a PAE of 60 % at an outputpower of 40 dBm. The resulting amplifier is simulated and constructed using a transmissionline topology. Two of these amplifiers are fabricated on a single board for outphasing application. Their suitability for outphasing application and supply modulation is investigated. 

An Class-E RF Power Amplifier Design for 802.11a Application

2013 ◽  
Vol 19 (7) ◽  
pp. 1895-1898
Author(s):  
Chang-Hsi Wu ◽  
Wei-Chen Chen ◽  
Kuan-Lin Liu
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Amplifier Design ◽  
Class E

A 3.7GHz 130nm CMOS-SOI class E RF power amplifier

2010 ◽  
Author(s):  
Luis Andia ◽  
Didier Belot ◽  
Martine Villegas ◽  
Genevieve Baudoin
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Rf Power Amplifier ◽  
Class E

HIGH LINEARITY GaN HEMT POWER AMPLIFIER WITH PRE-LINEARIZATION GATE DIODE

2004 ◽  
Vol 14 (03) ◽  
pp. 847-852 ◽  
Author(s):  
SHOUXUAN XIE ◽  
VAMSI PAIDI ◽  
STEN HEIKMAN ◽  
LIKUN SHEN ◽  
ALESSANDRO CHINI ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Rf Power ◽  
Input Capacitance ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
High Linearity ◽  
Nonlinear Input ◽  
Class B ◽  
Useful Power ◽  
The One

A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance C gs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The circuit with the pre-linearization gate diode demonstrates at least 4dB improvement on 3rd order intermodulation distortion (IMD3) performance over the one without the diode over the useful power range in two-tone measurement.

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

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