The preparation of low current-threshold infra-red-visible (0.89-0.72&#181;m) Al<inf>x</inf>Ga<inf>1-x</inf>As/Al<inf>y</inf>Ga<inf>1-y</inf>As double-heterostructure lasers by molecular beam epitaxy

Very low current threshold GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

10.1063/1.91297 ◽

1980 ◽

Vol 36 (1) ◽

pp. 11-14 ◽

Cited By ~ 46

Author(s):

W. T. Tsang ◽

F. K. Reinhart ◽

J. A. Ditzenberger

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

10.1063/1.91400 ◽

1980 ◽

Vol 36 (2) ◽

pp. 118-120 ◽

Cited By ~ 71

Author(s):

W. T. Tsang ◽

F. K. Reinhart ◽

J. A. Ditzenberger

Keyword(s):

Molecular Beam Epitaxy ◽

Substrate Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Low‐current‐threshold and high‐lasing uniformity GaAs–AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy

10.1063/1.90839 ◽

1979 ◽

Vol 34 (7) ◽

pp. 473-475 ◽

Cited By ~ 75

Author(s):

W. T. Tsang

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

IV-3 GaAs-AlxGa1-xAs double-heterostructure lasers prepared by molecular-beam epitaxy

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1974.18028 ◽

1974 ◽

Vol 21 (11) ◽

pp. 741-741

Author(s):

A.Y. Cho ◽

H.C. Casey

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

The reliability of (AlGa)As double‐heterostructure lasers grown by molecular beam epitaxy

10.1063/1.92868 ◽

1981 ◽

Vol 39 (9) ◽

pp. 683-685 ◽

Cited By ~ 12

Author(s):

W. T. Tsang ◽

R. L. Hartman ◽

B. Schwartz ◽

P. E. Fraley ◽

W. R. Holbrook

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Optical self‐pulsation behavior of cw (AlGa)As shallow proton‐bombarded and narrow‐striped (5 μm) double‐heterostructure lasers grown by molecular beam epitaxy

10.1063/1.92554 ◽

1981 ◽

Vol 39 (1) ◽

pp. 34-37 ◽

Cited By ~ 3

Author(s):

W. T. Tsang ◽

W. R. Holbrook ◽

P. E. Fraley

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Continuous room‐temperature operation of GaAs‐AlxGa1−xAs double‐heterostructure lasers prepared by molecular‐beam epitaxy

10.1063/1.88832 ◽

1976 ◽

Vol 28 (9) ◽

pp. 501-503 ◽

Cited By ~ 70

Author(s):

A. Y. Cho ◽

R. W. Dixon ◽

H. C. Casey ◽

R. L. Hartman

Keyword(s):

Molecular Beam Epitaxy ◽

Room Temperature ◽

Molecular Beam ◽

Double Heterostructure ◽

Room Temperature Operation

Mid-infrared (λ=2.775 µm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Semiconductors ◽

10.1134/1.1582546 ◽

2003 ◽

Vol 37 (6) ◽

pp. 736-739

Author(s):

S. V. Ivanov ◽

K. D. Moiseev ◽

V. A. Kaigorodov ◽

V. A. Solov’ev ◽

S. V. Sorokin ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Injection Laser ◽

Mid Infrared ◽

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

Molecular beam epitaxy grown 0.6 eV n∕p∕n InPAs∕InGaAs∕InAlAs double heterostructure thermophotovoltaic devices using carbon as the p-type dopant

10.1116/1.2192535 ◽

2006 ◽

Vol 24 (3) ◽

pp. 1626 ◽

Cited By ~ 3

Author(s):

Bernard Wernsman ◽

Thomas Bird ◽

Michael Sheldon ◽

Samuel Link ◽

Rebecca Wehrer

Keyword(s):

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Double Heterostructure ◽

P Type