double heterostructure
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P‐ InAsSbP /n‐ InAs double heterostructure as an on‐chip mid‐IR evanescent wave sensor of liquids

2021 ◽  
Author(s):  
Sergey Arkadievich Karandashev ◽  
Tatiana Sergeevna Lukhmyrina ◽  
Boris Anatolievich Matveev ◽  
Maxim Anatolievich Remennyy ◽  
Usikova Aleksandrovna Anna
Keyword(s):  
Evanescent Wave ◽  
Double Heterostructure ◽  
On Chip

Characterization of the Electrical Properties of a Double Heterostructure GaN/AlGaN Epitaxial Layer with an AlGaN Interlayer

2021 ◽  
Vol 50 (4) ◽  
pp. 2521-2529
Author(s):  
Qingzhi Meng ◽  
Qijing Lin ◽  
Weixuan Jing ◽  
Qi Mao ◽  
Libo Zhao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Double Heterostructure

scholarly journals Модификация гребневых волноводов полупроводниковых лазеров фокусированным ионным пучком

2021 ◽  
Vol 47 (24) ◽  
pp. 51
Author(s):  
А.С. Паюсов ◽  
М.И. Митрофанов ◽  
Г.О. Корнышов ◽  
А.А. Серин ◽  
Г.В. Вознюк ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Threshold Current ◽  
Optical Characteristics ◽  
Significant Modification ◽  
Etching Depth ◽  
Double Heterostructure ◽  
Ridge Waveguides ◽  
Emitting Lasers ◽  
Three Degrees Of Influence

We studied the influence of the focused ion beam milling of ridge waveguides on lasing parameters of edge-emitting lasers, based on a separate confinement double heterostructure. It is shown that there are three degrees of influence, according to the etching depth: modification of the waveguide properties only, a decrease in efficiency without changing the threshold current, and a simultaneous deterioration in the threshold current and efficiency with significant modification of the optical characteristics of the laser.

Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes

2020 ◽  
Vol 35 (7) ◽  
pp. 075010 ◽  
Author(s):  
N Dyakonova ◽  
S A Karandashev ◽  
M E Levinshtein ◽  
B A Matveev ◽  
M A Remennyi
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Double Heterostructure ◽  
Infrared Photodiodes

Direct bandgap electroluminescence from SiGeSn/GeSn double-heterostructure monolithically grown on Si

2020 ◽  
Author(s):  
Yiyin Zhou ◽  
Yuanhao Miao ◽  
Solomon Ojo ◽  
Grey Abernathy ◽  
Wei Du ◽  
...  
Keyword(s):  
Direct Bandgap ◽  
Double Heterostructure

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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