Review of our density functional study on the structures of conductive filaments and ion migration behaviors in tantalum oxide based resistive switching devices

Author(s):  
Satoshi Watanabe ◽  
Bo Xiao
RSC Advances ◽  
2021 ◽  
Vol 11 (30) ◽  
pp. 18371-18380
Author(s):  
Erik Bhekti Yutomo ◽  
Fatimah Arofiati Noor ◽  
Toto Winata

The number of dopant atoms is a parameter that can effectively tune the electronic and magnetic properties of graphitic and pyridinic N-doped graphene.


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