Temperature and Stress Dependence of Screw Dislocation Mobility in Nb-V-Ta Alloys Using Kinetic Monte Carlo Simulations

In this work we present simulations of thermally-activated screw dislocation motion in Nb-Ta-V alloys for two distinct scenarios, one where kink propagation is solely driven by chemical energy changes, i.e., thermodynamic energy differences, and another one where a migration barrier of 1.0 eV is added to such changes. The simulations have been performed using a kinetic Monte Carlo model for screw dislocation kinetics modified for complex lattice-level chemical environments. At low stresses, we find that dislocation motion in the case with no barrier is controlled by long waiting times due to slow nucleation rates and extremely fast kink propagation. Conversely, at high stress, the distribution of sampled time steps for both kink-pair nucleation and kink propagation events are comparable, resulting in continuous motion and faster velocities. In the case of the 1.0-eV kink propagation energy barrier, at low stresses kink motion becomes the rate-limiting step, leading to slow dynamics and large kink lateral pileups, while at high stresses both kink pair nucleation and kink propagation coexist on similar time scales. In the end, dislocation velocities differ by more than four orders of magnitude between both scenarios, emphasizing the need to have accurate calculations of kink energy barriers in the complex chemical environments inherent to these alloys.

Interaction between Screw Dislocation and Interfacial Crack in Fine-Grained Piezoelectric Coatings under Steady-State Thermal Loading

The mechanical behavior of fine-grained piezoelectric/substrate structure with screw dislocation and interface edge crack under the coupling action of heat, force and electricity are studied. Using the mapping function method, firstly, the finite area plane is transformed into the right semi-infinite plane, then the expression of the temperature field is given with the help of the complex function, and then the temperature field of the problem is achieved. By constructing the general solution of the governing equation with temperature function, the analytical expression of the image force is derived. Finally, the effects of material parameters, temperature gradient, coating thickness and crack size on image force are analyzed by numerical examples. The results show that the temperature gradient has a very significant effect on the image force, and thicker coating is conducive to the stability of dislocation and interface crack.

Pressure induced structural phase crossover of a GaSe epilayer grown under screw dislocation driven mode and its phase recovery

Hydrostatically pressurized studies using diamond anvil cells on the structural phase transition of the free-standing screw-dislocation-driven (SDD) GaSe thin film synthesized by molecular beam epitaxy have been demonstrated via in-situ angle-dispersive synchrotron X-ray diffraction and Raman spectroscopy. The early pressure-driven hexagonal-to-rock salt transition at approximately ~ 20 GPa as well as the outstandingly structural-phase memory after depressurization in the SDD-GaSe film was recognized, attributed to the screw dislocation-assisted mechanism. Note that, the reversible pressure-induced structural transition was not evidenced from the GaSe bulk, which has a layer-by-layer stacking structure. In addition, a remarkable 1.7 times higher in bulk modulus of the SDD-GaSe film in comparison to bulk counterpart was observed, which was mainly contributed by its four times higher in the incompressibility along c-axis. This is well-correlated to the slower shifting slopes of out-of-plane phonon-vibration modes in the SDD-GaSe film, especially at low-pressure range (< 5 GPa). As a final point, we recommend that the intense density of screw dislocation cores in the SDD-GaSe lattice structure plays a crucial role in these novel phenomena.